Zobrazeno 1 - 10
of 40
pro vyhledávání: '"A.M. Duchenois"'
Autor:
J.L. Benchimol, J. Mba, B. Sermage, M. Riet, S. Blayac, P. Berdaguer, A.M. Duchenois, P. André, J. Thuret, C. Gonzalez, A. Konczykowska
Publikováno v:
Journal of Crystal Growth. 209:476-480
InGaAs/InP heterojunction bipolar transistors with a carbon-doped base are shown to have lower gain that those with a Be-doped base. In order to keep advantage of the low diffusivity of the carbon dopant, alternative carbon-doped materials have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::305cd2eab326d8e192bbbaa602e7f456
https://doi.org/10.1016/s0022-0248(99)00601-6
https://doi.org/10.1016/s0022-0248(99)00601-6
Publikováno v:
Journal of Crystal Growth. 188:349-354
The chemical beam epitaxy (CBE) growth of carbon doped InGaAs/InP HBTs for the fabrication of digital circuits using carbon and silicon tetrabromide as source of dopant is reported. Despite their low vapour pressure (CBr 4 ) or high efficiency (SiBr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bc8c1e6d0558df21365646158949973
https://doi.org/10.1016/s0022-0248(98)00094-3
https://doi.org/10.1016/s0022-0248(98)00094-3
Autor:
A.M. Duchenois, P. Andre, M. Meghelli, A. Scavennec, A. Konczykowska, Jean Godin, M. Riet, J.L. Benchimol, P. Desrousseaux
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:1328-1335
High-bit-rate optical communication links require high performance circuits. Electrical time division multiplex (ETDM) single channel bit-rate of 40 Gb/s is at hand, due to recent progress in both technology and design methodology. Multilevel modulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8800a9d89cc7ab35fc31cf3e3eebd66
https://doi.org/10.1109/4.711331
https://doi.org/10.1109/4.711331
Publikováno v:
Microelectronic Engineering. 15:161-164
A self-aligned GaAlAs/GaAs HBT technology with tungsten emitter and base ohmic contacts is presented. The HBT's layers are grown by MBE, the emitter contact layer is Ga 0.35 In 0.65 As. A Zinc diffusion allows for contacting the extrinsic base layer.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca96026f56838d822411062897812fdb
https://doi.org/10.1016/0167-9317(91)90204-q
https://doi.org/10.1016/0167-9317(91)90204-q
Autor:
A.M. Duchenois, Sylvain Blayac, Muriel Riet, P. Berdaguer, M. Abboun, Jean Godin, Frédéric Aniel, Agnieszka Konczykowska, J.L. Benchimol
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
InP/InGaAs DHBT technology for 40 Gb/s ICs is first presented. For these circuit applications, a sufficient breakdown voltage (>5 V), a static gain around 50, cutoff frequencies (f/sub T/) and maximum oscillation frequencies (f/sub max/) greater than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e78a9c2204f1e6d81048a96575ba726a
https://doi.org/10.1109/iciprm.1999.773738
https://doi.org/10.1109/iciprm.1999.773738
Autor:
P. Berdaguer, A.M. Duchenois, Sylvain Blayac, J.R. Burie, J.L. Benchimol, N. Kauffmann, P. Desrousseaux, Agnieszka Konczykowska, Muriel Riet, Jean Godin, P. Andre
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
To address the needs for very high speed electronic circuits for high bit-rate optical communications, we have developed an InP DHBT self-aligned process with f/sub T/ and f/sub MAX/ of 130 and 150 GHz; 40 Gb/s circuits, such as a 2:1 and 4:1 multipl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0e9fa6973787d272bac7bc5fe3ccd28
https://doi.org/10.1109/gaas.1999.803754
https://doi.org/10.1109/gaas.1999.803754
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
A InGaAs/InP double heterojunction bipolar transistor technology has been developed to meet the requirements of circuits for 40 Gb/s optical communication links. In particular a breakdown voltage higher than 10 V, cut-off frequencies higher than 60 G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7d60aace682966c9af65de9373ce151
https://doi.org/10.1109/iciprm.1996.492390
https://doi.org/10.1109/iciprm.1996.492390
Autor:
J. Mba, D. Caffin, A.M. Duchenois, M. Riet, J.L. Benchimol, P. Launay, J. Godin, A. Scavennec
Publikováno v:
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).
An important doping level of quaternary layers and a thin collector thickness is experimentally shown to improve electron transport properties in base-collector junction of InP/InGaAs/InGaAsP Double Heterojunction Bipolar Transistors (DHBTs) and also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b5105326cbd8b8ebe389823899ad63d
https://doi.org/10.1109/iciprm.1998.712707
https://doi.org/10.1109/iciprm.1998.712707
Autor:
P. Desrousseaux, J. Godin, M. Meghelli, P. Launay, A.M. Duchenois, Muriel Riet, J.L. Benchimol, P. Andre, Agnieszka Konczykowska
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.
High bit-rate optical communication links require high performance circuits. This paper presents a InP Double Heterojunction HBT technology, and circuits fabricated with it: 40 Gbit/s MUX and DMUX, a 20 Gbit/s driver, a 30 Gbit/s selector-driver, a d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a475d41ff0e9445a75c9438157bd346
https://doi.org/10.1109/gaas.1997.628273
https://doi.org/10.1109/gaas.1997.628273
Autor:
A.M. Duchenois, J.L. Courant, L. Bricard, B. Lescaut, D. Caffin, L.S. How Kee Chun, M. Meghelli, P. Launay, J.L. Benchimol
Publikováno v:
Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.
We have studied different materials (silicon nitride, silicon oxide, polyimide) for passivating InP-based HBTs, and their influence on the device electrical performances. Polyimide was found to induce the least degradation after passivation. A double
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93325b256b9c79e4b95b6b7baeb05880
https://doi.org/10.1109/iciprm.1997.600252
https://doi.org/10.1109/iciprm.1997.600252