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pro vyhledávání: '"A.M. Cartier"'
The overarching goals of the European Innovation Partnership on Active and Healthy Ageing (EIP on AHA) are to enable European citizens to lead healthy, active and independent lives whilst ageing. The EIP on AHA includes 74 Reference Sites. The aim of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::a8b023e83a30820a208425870c96ba79
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3000954
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3000954
Background: Visual Analogue Scale (VAS) is a validated tool to assess control in allergic rhinitis patients. Objective: The aim of this study was to validate the use of VAS in the MASK-rhinitis (MACVIA-ARIA Sentinel NetworK for allergic rhinitis) app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::64a8fb8d50253c71aa53320dbadc7783
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3003614
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3003614
Autor:
Fabrice Letertre, Benedite Osternaud, Nicolas Daval, Ian Cayrefourcq, C. Lagahe, B. Bataillou, C. Aulentte, C. Morales, N. Sousbie, S. Sartori, Carlos Mazure, Franck Fournel, Beatrice Biasse, E. Jalaguier, B. Aspar, J.F. Michaud, C. Richtarch, Bruno Ghyselen, A.M. Cartier, Takeshi Akatsu, S. Pocas, Olivier Rayssac, A. Beaumont, A. Soubie, Hubert Moriceau
Publikováno v:
Journal of Electronic Materials. 32:829-835
The SmartCut process was first developed to obtain silicon-on-insulator (SOI) materials. Now an industrial process, the main Unibond SOI-structure trends are reported in this paper. Many material combinations can be achieved by this process, because
Autor:
F. Metral, A. Soubie, B. Aspar, A.J. Auberton-Herve, H. Moriceau, A.M. Cartier, M. Bruel, T. Poumeyrol, Christophe Maleville
Publikováno v:
1996 IEEE International SOI Conference Proceedings.
Silicon on insulator technologies appear to be suitable for low power and low voltage electronics. SIMOX wafers have been considered as the best candidates to realize ULSI devices. An alternative route has been proposed by M. Bruel (1995-96) referred
Autor:
B. Biasse, A.M. Cartier, A.M. Papon, F. Gusella, J.F. Michaud, J. Margail, C. Jaussaud, C. Pudda, J.M. Lamure, A. Soubie
Publikováno v:
1990 IEEE SOS/SOI Technology Conference. Proceedings.
A 150 m/sup 2/ class 100 clean room, specially dedicated for separation by implantation of oxygen (SIMOX) wafer production on a semi-industrial basis, has been set up at LETI. This facility includes a very high current oxygen ion implantation machine
Publikováno v:
1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).
During the past few years, there have been intensive efforts to produce ULSI quality silicon on insulator structures. Several processes have been developed in order to fabricate such SOI structures. These approaches can be placed in two main categori
Publikováno v:
2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125).
Silicon on insulator (SOI) technologies are now entering mainstream applications, with recent announcements regarding for instance microprocessor applications. One condition for this to happen has been proof that SOI material manufacturing processes
Publikováno v:
Electronics Letters. 32:1985
The feasibility of transferring patterned and multilayered thin films, simulating part of the stacked structure of a CMOS integrated circuit, from their original bulk silicon substrate to a final substrate, was demonstrated using the Smart-Cut proces
Publikováno v:
Le Journal de Physique Colloques. 44:C5-303
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 21:452-455
In this paper we describe some major problems related to the use of high energy ion implantation for fabrication of isolation wells for CMOS technology. MeV implants of phosphorus were performed on a Van de Graaff accelerator at different wafer orien