Zobrazeno 1 - 10
of 291
pro vyhledávání: '"A.L. Syrkin"'
Publikováno v:
Kardiologiya i serdechno-sosudistaya khirurgiya. 15:622
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f91405a1401c70c47bad38efa9ebf79
https://doi.org/10.17116/kardio202215061622
https://doi.org/10.17116/kardio202215061622
Akademický článek
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Akademický článek
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Publikováno v:
Diamond and Related Materials. 6:1463-1466
We report on the relative results of dry etching 〈0001〉 Si-like or 〈000 1 〉 C-like oriented faces of bulk natural 6H-SiC Lely crystals. For comparison, a 6H epilayer from Cree Research Inc. was also investigated. In all three cases, the initi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faa31efa10a8785a03fdca7e4345384c
https://doi.org/10.1016/s0925-9635(97)00116-7
https://doi.org/10.1016/s0925-9635(97)00116-7
Publikováno v:
Materials Science and Engineering: B. 46:304-307
The low temperature donor-acceptor pair photoluminescence spectra of n-type 6H-SiC has been investigated, both theoretically and experimentally. The excitation intensity dependence of the maximum position and width of the no-phonon line has been obse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fc16866b043f318658f906b46237e66
https://doi.org/10.1016/s0921-5107(97)00008-1
https://doi.org/10.1016/s0921-5107(97)00008-1
Autor:
A.L. Syrkin, G. Bastide, V. E. Chelnokov, M. G. Rastegaeva, T. Bretagnon, A. A. Lebedev, N.S. Savkina, Jean-Marie Bluet
Publikováno v:
Materials Science and Engineering: B. 46:236-239
We have studied metal-silicon carbide barrier height for various structures. Material of both n- and p-type conductivity 3C, 6H and 4H varieties have been used with Mo or Au Schottky barriers. In some cases, we observe a dependence of the barrier hei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f284f3b4d6f1ea2b3803f52b007b27f7
https://doi.org/10.1016/s0921-5107(96)01978-2
https://doi.org/10.1016/s0921-5107(96)01978-2
Autor:
V. E. Chelnokov, A.L. Syrkin
Publikováno v:
Materials Science and Engineering: B. 46:248-253
The high temperature applications of SiC based devices have been considered for a long time. On the other hand, the recent progress in the epitaxial and bulk growth of silicon carbide have made possible the realization of a large variety of devices i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4e2672ba55e2e4b534a001264f97331
https://doi.org/10.1016/s0921-5107(96)01990-3
https://doi.org/10.1016/s0921-5107(96)01990-3
Publikováno v:
Materials Science and Engineering: B. 29:198-201
This work makes a comparison of some experimental data on surface barrier height with calculations based on classical models of surface barrier formation in semiconductor-metal structures. We have estimated the dependences of surface barrier height o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6366f935cf3e45171cd2b598e4e1b808
https://doi.org/10.1016/0921-5107(94)04052-6
https://doi.org/10.1016/0921-5107(94)04052-6
Autor:
N.S. Savkina, M. M. Anikin, V. V. Zelenin, A. A. Lebedev, A.L. Syrkin, Anatoly M. Strel'chuk, P. A. Ivanov, M. G. Rastegaeva, A. N. Andreev, V. E. Chelnokov
Publikováno v:
Materials Science and Engineering: B. 29:190-193
Voltage stabilitrons based on 6H-SiC p-n structures produced by the open-system sublimation technique have been fabricated. Stabilization voltages were in the range 4–50 V. Operating currents were from 1 to 100 mA. Differential resistance was in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159b0f5046b557218ff1a01284f57a2e
https://doi.org/10.1016/0921-5107(94)04050-e
https://doi.org/10.1016/0921-5107(94)04050-e