Zobrazeno 1 - 10
of 26
pro vyhledávání: '"A.Kh. Khusainov"'
Autor:
C. Polese, A. S. Gogolev, S.B. Dabagov, M.P. Zhukov, A. Liedl, A. P. Potylitsyn, Dariush Hampai, A.Kh. Khusainov
In this work the testing results for the spectrometer with a large sensitive area developed for the crystal monitoring station of modern hadron accelerator control systems used for the beam collimation are presented. The investigations were carried o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12bf8c03a78a9b50e61bce87e1854fd8
http://hdl.handle.net/11573/780953
http://hdl.handle.net/11573/780953
Autor:
Yu. V. Borisov, A. V. Vasiliev, A. K. Fomin, A.I. Shablii, A.Kh. Khusainov, P. Geltenbort, M. S. Lasakov, A. Pustovoit, A. P. Serebrov, V. A. Solovei, O.I. Kon’kov, I.M. Kotina
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 545:301-308
A silicon UCN detector with an area of 45 cm 2 and with a 6 LiF converter was developed at PNPI. The spectral efficiency of the silicon UCN detector was measured by means of a gravitational spectrometer at ILL. The sandwich-type detector from two sil
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 428:58-65
A breakthrough in the performance of p–i–n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and G
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 380:186-192
This paper presents a comparison of HgI2, CdTe and Si (p-i-n) detector technologies for use in X-ray spectroscopy applications in terms of the basic material properties, the detector fabrication techniques and the spectral responses achieved. The req
Autor:
A.Kh. Khusainov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 322:335-340
The results of the development of detecting units for spectrometry for X- and γ-rays based on CdTe crystals cooled by Peltier elements are presented in the given report. Cooling of CdTe detecting units with M-S-M and p-i-n structures to temperatures
Publikováno v:
Паёми Сино, Vol 23, Iss 1, Pp 18-24 (2021)
Objective: To evaluate the effectiveness of ozone therapy in the combination of arterial hypertension (AH) and gastropathy in miners. Methods: Two groups of male miners with AH and gastropathy were analyzed: group I – 43 miners aged 47.4±1.3 ye
Externí odkaz:
https://doaj.org/article/8fdadcd664874e4cb1bbe4465de97381
Publikováno v:
IEEE Transactions on Nuclear Science. 15:226-231
Autor:
S.M. Ryvkin, N.I. Komyak, R.I. Plotnikov, N.B. Strokan, A.N. Zhukovsky, D.A. Goganov, A.Kh. Khusainov
Publikováno v:
Nuclear Instruments and Methods. 95:177-180
We have proposed an X-ray spectrometer based on p-i-n detectors obtained by compensation of n-germanium by radiation defects. The detectors are stable at room temperature, with a thin entrance window and are made selfconsistent which noticeably simpl
Publikováno v:
Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1977, 12 (2), pp.331-334. ⟨10.1051/rphysap:01977001202033100⟩
Revue de Physique Appliquée, Société française de physique / EDP, 1977, 12 (2), pp.331-334. ⟨10.1051/rphysap:01977001202033100⟩
The metal-semiconductor-metal (MSM) structure often used for cadmium telluride radiation detectors has been studied for etched and mechanically polished material. The band bending at the interfaces has been determined by looking at the spectral depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33951643071e50023b558eb0719ab5e4
https://hal.archives-ouvertes.fr/jpa-00244167/document
https://hal.archives-ouvertes.fr/jpa-00244167/document
Publikováno v:
Physics of p-n Junctions and Semiconductor Devices ISBN: 9781475712346
The temperature and bias dependences of the capacitance of n’—n—p structures made of germanium corpensated by γ -ray generated radiation defects are explained using an equivalent circuit. It is demonstrated that the carrier energy distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::883dba7be41f9a0cf91ad5265c117f99
https://doi.org/10.1007/978-1-4757-1232-2_32
https://doi.org/10.1007/978-1-4757-1232-2_32