Zobrazeno 1 - 10
of 290
pro vyhledávání: '"A.K. Oki"'
Autor:
A.K. Oki, David Eng, Richard Lai, Q. Kan, T.R. Block, Yeong-Chang Chou, Denise Leung, A.K. Sharma
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 53:3398-3406
This paper describes RF-driven gate current effects on the dc/RF performance of 0.15-/spl mu/m (gate length) 2-mil (substrate thickness) GaAs pseudomorphic high-electron mobility transistor (pHEMT) monolithic microwave integrated circuit power amplif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::569449cff6b0c85b2706b9474b5aad6a
https://doi.org/10.1109/tmtt.2005.858384
https://doi.org/10.1109/tmtt.2005.858384
Autor:
A.K. Oki, T. Jenkins, W. Okamura, Tony Quach, D. Sawdai, E. Kaneshiro, P.M. Watson, A. Gutierrez-Aitken, L. Kehias, J. Eldredge, R. Worley, T.R. Block, R. Welch
Publikováno v:
IEEE Journal of Solid-State Circuits. 2:1126-1134
This paper describes a broad-band switch mode power amplifier based on the indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier combines the alternative Class-E mode of operation with a harmonic termination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b8f807e0d99f23904f748f503fa7916
https://doi.org/10.1109/jssc.2002.801193
https://doi.org/10.1109/jssc.2002.801193
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 50:900-909
Digital logic integrated circuits are advancing toward ever higher speeds of operation. Clock frequencies already exceed 1 GHz in some Si CMOS-based consumer products, and even higher speeds are attainable in specialized technologies, such as those b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::669ecafaf2b9a6a17a5b729ff71a4846
https://doi.org/10.1109/22.989973
https://doi.org/10.1109/22.989973
Autor:
X. Zhang, T.R. Block, T. P. Chin, Dwight C. Streit, Mike Wojtowicz, A. C. Han, A. Cavus, A.K. Oki
Publikováno v:
Journal of Applied Physics. 86:6160-6163
Photoreflectance (PR) and photoluminescence (PL) techniques were used to characterize the AlGaAs/GaAs heterojunction bipolar transistor (HBT) wafers grown by molecular beam epitaxy (MBE). The line shape of the PR GaAs signal is closely related to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d19036d12cfc36207877c6d2ebef673c
https://doi.org/10.1063/1.371669
https://doi.org/10.1063/1.371669
Autor:
Liem T. Tran, T.R. Block, J.H. Elliott, A.K. Oki, J. Cowles, D.C. Streit, M. Nishimoto, Kevin W. Kobayashi, A. Gutierrez-Aitken
Publikováno v:
IEEE Journal of Solid-State Circuits. 34:1188-1195
This paper reports on what is believed to be the highest IP3/P/sub dc/ power linearity figure of merit achieved from a monolithic microwave integrated circuit (MMIC) amplifier at millimeter-wave frequencies. The 44 GHz amplifier is based on an InP he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e66dfa38cd2443f2e17f72c2b240ab02
https://doi.org/10.1109/4.782075
https://doi.org/10.1109/4.782075
Autor:
Huei Wang, T.R. Block, A.K. Oki, J. Cowles, M. Nishimoto, Kevin W. Kobayashi, J.H. Elliott, Liem T. Tran, Barry R. Allen, D.C. Streit
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:2541-2552
This paper will discuss the practical design of an InP-based heterojunction bipolar transistor (HBT) Q-band high IP3 monolithic microwave integrated circuit (MMIC) amplifier. The amplifier features a novel "double-balanced" design approach that incor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89eb54f0043d28a66c6d0c97fabc1365
https://doi.org/10.1109/22.739246
https://doi.org/10.1109/22.739246
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:870-876
Here we describe a unique Ka-band self-oscillating HEMT-HBT cascode mixer design which integrates an active tunable resonator circuit. The VCO-mixer MMIC integrates GaAs HEMT's and HBT's using selective molecular beam epitaxy (MBE) technology. The HE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::992f5bc857452b04863ebb454d5bd5e9
https://doi.org/10.1109/4.678648
https://doi.org/10.1109/4.678648
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 44:739-748
An InAlAs-InGaAs-InP HBT CPW distributed amplifier (DA) with a 2-30 GHz 1-dB bandwidth has been demonstrated which benchmarks the widest bandwidth reported for an HBT DA. The DA combines a 100 GHz fmax and 60 GHz fT HBT technology with a cascode copl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f789df1fc539d34c021ae6d93497526
https://doi.org/10.1109/22.493928
https://doi.org/10.1109/22.493928
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:714-718
We report on a 1-6 GHz HEMT-HBT three-stage variable gain amplifier (VGA), which is realized using selective molecular beam epitaxy (MBE). The VGA integrates an HEMT low noise amplifier with an HBT analog current-steer variable gain cell and output d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6214a0858f9347fe6232a640f43353aa
https://doi.org/10.1109/4.509854
https://doi.org/10.1109/4.509854
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:1412-1418
The authors describe an AlGaAs/GaAs heterojunction bipolar transistor (HBT) X-band down-converter monolithic microwave integrated circuit (MMIC) which integrates a double double-balanced Schottky mixer and five stages of HBT amplification to achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c11f873e209e4d90a0f8e7845128a4a
https://doi.org/10.1109/4.540049
https://doi.org/10.1109/4.540049