Zobrazeno 1 - 1
of 1
pro vyhledávání: '"A.K. Aganval"'
Autor:
R.R. Siergiej, A.W. Morse, Rowland C. Clarke, A.K. Aganval, A.A. Burk, C.D. Brandt, P.A. Orphanos
Publikováno v:
Proceedings of International Electron Devices Meeting.
Static induction transistors have been demonstrated in 4H-SiC. SiC specific semiconductor processing technologies such as epitaxy, reactive ion etching, and sidewall Schottky gates were employed. Under pulsed power test conditions, 4H-SiC SITs develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff374100729d064731578741c10e4867
https://doi.org/10.1109/iedm.1995.499213
https://doi.org/10.1109/iedm.1995.499213
