Zobrazeno 1 - 10
of 23
pro vyhledávání: '"A.K Kewell"'
Autor:
Karen J. Kirkby, Russell M. Gwilliam, A.K Kewell, Kevin P. Homewood, T.M Butler, M. A. Lourenço
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :159-163
β-FeSi2/Si light emitting devices (LEDs) have been attracting great interest since the first successful demonstration of an ion beam synthesised (IBS) device operating at a wavelength of 1.5 μm . We report here on a study of the electrical, electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c484d9ab612d8e9da89dc83ed83a2cb
https://doi.org/10.1016/s0168-583x(00)00663-7
https://doi.org/10.1016/s0168-583x(00)00663-7
Autor:
Russell M. Gwilliam, Yanmei Chen, C.N McKinty, Guosheng Shao, A.K Kewell, Karen J. Reeson, Kevin P. Homewood, M. A. Lourenço, J.S Sharpe, T.M Butler
Publikováno v:
Thin Solid Films. 381:188-193
Semiconducting silicides promise particular advantages for the development of optoelectronic devices in silicon. In particular, the direct gap of some of these silicides and the strong optical transitions make them good candidates for efficient light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c91982888fb99c604d8b21e636adc9b
https://doi.org/10.1016/s0040-6090(00)01742-9
https://doi.org/10.1016/s0040-6090(00)01742-9
Autor:
J.S Sharpe, M. A. Lourenço, T.M Butler, Russell M. Gwilliam, Yanmei Chen, K.J Reeson Kirkby, C.N McKinty, S. Ledain, Guosheng Shao, A.K Kewell, Kevin P. Homewood
Publikováno v:
Scopus-Elsevier
Ru2Si3 has been shown both theoretically and experimentally to be a direct gap semiconductor. In this paper we report the fabrication of orthorhombic Ru2Si3 by Ion Beam Synthesis (high dose ion implantation followed by high temperature anneal). This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc18ef05e2ef12f8a93cf101b4f99ed4
https://doi.org/10.1016/s0168-583x(99)00961-1
https://doi.org/10.1016/s0168-583x(99)00961-1
Autor:
Daniel Leong, Colin McKinty, M. A. Lourenço, M.A. Harry, A.K Kewell, Kevin P. Homewood, Yan Ling Chen, G. Shao, Karen J. Reeson, J.S Sharpe
Publikováno v:
Microelectronic Engineering. 50:223-235
Silicon is commercially by far the most important semiconductor, however, because silicon has an indirect band gap it would initially appear to be unsuitable for optoelectronic applications. A major research challenge is, therefore, to achieve high i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30d74ed55e3e2ec88f40647f2b98c62f
https://doi.org/10.1016/s0167-9317(99)00286-5
https://doi.org/10.1016/s0167-9317(99)00286-5
Publikováno v:
Sensors and Actuators A: Physical. 65:160-164
A temperature sensor is described which is compatible with silicon microelectronics and operates over the range 40–150 K. The measurement principle is based on the analysis of the time decay of the luminescence emitted by erbium-doped silicon. Expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ecc66b7ecfd7818d3c9721c0189383e
https://doi.org/10.1016/s0924-4247(97)01699-3
https://doi.org/10.1016/s0924-4247(97)01699-3
Publikováno v:
IEE Proceedings - Optoelectronics. 143:312-315
Established silicon microelectronics fabrication methods can be exploited to fabricate low-loss silicon integrated optical devices of dimensions which are compatible with single mode fibres and operate at the important wavelengths of 1.3 and 1.5 /spl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d1945afd73677f36a83aabe307b4481
https://doi.org/10.1049/ip-opt:19960673
https://doi.org/10.1049/ip-opt:19960673
Autor:
Soon Thor Lim, Alan G. R. Evans, A. S. Way, Seong Phun Chan, Ching Eng Png, Graham T. Reed, A. Vonsovici, Ragheid M.H. Atta, A.K Kewell, Stacey M. Jackson, Goran Z. Masanovic
Publikováno v:
SPIE Proceedings.
Silicon Carbide is a potentially useful compound for use in silicon based photonics because cubic silicon carbide (3C-SiC), possesses a first order electro-optic (Pockels) effect, something absent in pure silicon. This means the material is potential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d19489beba5eac5bf819ab973059047
https://doi.org/10.1117/12.463851
https://doi.org/10.1117/12.463851
Publikováno v:
SPIE Proceedings.
We have designed and fabricated waveguide optical modulators using cubic silicon carbide-(3C-SiC)-on-insulator rib waveguides. A refractive index change is induced in the rib via the plasma dispersion effect. These types of devices have potential for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b23e65c493f8bb04d6d9b1ee2124756
https://doi.org/10.1117/12.426920
https://doi.org/10.1117/12.426920
Autor:
C.N McKinty, J.S Sharpe, Thomas R. Butler, M. A. Lourenço, A.K Kewell, Kevin P. Homewood, Russell M. Gwilliam, Karen J. Kirkby
Publikováno v:
SPIE Proceedings.
Attempts to obtain electroluminescence from silicon-based devices have been largely frustrated by the indirect bandgap of the semiconductor. One approach, described here, is to fabricate a direct bandgap material which is compatible with silicon proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fec3d28c2113b48c3e7dc30f03ada1e
https://doi.org/10.1117/12.379615
https://doi.org/10.1117/12.379615
Autor:
A.K Kewell, Kevin P. Homewood, T.M Butler, M. A. Lourenço, Karen J. Kirkby, Russell M. Gwilliam
Publikováno v:
Japanese Journal of Applied Physics. 40:4041
Ion beam synthesised β-FeSi2 light emitting devices have been fabricated by ion implantation of iron into pre-grown abrupt silicon p–n junctions. Several samples were fabricated by varying the implant conditions and the junction characteristics (l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca08005e7b08912cf42330135b6c52a2
https://doi.org/10.1143/jjap.40.4041
https://doi.org/10.1143/jjap.40.4041