Zobrazeno 1 - 10
of 216
pro vyhledávání: '"A.J. Moseley"'
Autor:
Kiyokawa, Yuki1 (AUTHOR) ykiyokawa@dent.asahi-u.ac.jp, Terajima, Masahiko2 (AUTHOR) terajima5708@gmail.com, Sato, Masahiro3 (AUTHOR) sato-masa@ncchd.go.jp, Inada, Emi4 (AUTHOR) inada@dent.kagoshima-u.ac.jp, Hori, Yuria1 (AUTHOR) ped-yuria@dent.asahi-u.ac.jp, Bando, Ryo1 (AUTHOR) shounishika-bando@dent.asahi-u.ac.jp, Iwase, Yoko5 (AUTHOR) iwase@dent.asahi-u.ac.jp, Kubota, Naoko4 (AUTHOR) kubotarecta@gmail.com, Murakami, Tomoya1,6 (AUTHOR) tomoya.ip@gmail.com, Tsugane, Hiroko1 (AUTHOR) hiroko@dent.asahi-u.ac.jp, Watanabe, Satoshi7 (AUTHOR) kettle@affrc.go.jp, Sonomura, Takahiro2 (AUTHOR) sonom@dent.asahi-u.ac.jp, Terunuma, Miho8 (AUTHOR) mterunuma@dent.niigata-u.ac.jp, Maeda, Takeyasu9 (AUTHOR) maedat@dent.niigata-u.ac.jp, Noguchi, Hirofumi10 (AUTHOR) noguchih@med.u-ryukyu.ac.jp, Saitoh, Issei1 (AUTHOR) isaitoh@dent.asahi-u.ac.jp
Publikováno v:
Journal of Clinical Medicine. Dec2024, Vol. 13 Issue 23, p7058. 14p.
Publikováno v:
Journal of Electronic Materials. 24:1617-1620
The use of optoelectronic integrated circuits (OEICs) is now emerging as a practical technology for a variety of applications, particularly in advanced telecommunications. OEICs consist of a range of devices such as lasers, waveguides, modulators, am
Publikováno v:
Journal of Crystal Growth. 126:317-324
Two techniques are described to achieve selective area MOVPE growth of InP based materials which are suitable for device integration. Using a three-stage growth process, the integration of a DFB laser and a ridge waveguide via a butt junction has bee
Autor:
N. Maunq, J. Thompson, D.E. Sykes, P.M. Charles, Bruce Hamilton, A.J. Moseley, R E Pritchard, N. Carr, A. Chew, A.K. Wood
Publikováno v:
Journal of Crystal Growth. 124:227-234
We have evaluated the structural and optical properties of epitaxial layers of GaInAs and GaInAsP grown on InP substrates patterned with SiO 2 masks. The effect of the mask on the MOVPE grown material surrounding and underlying the mask, and the devi
Publikováno v:
Journal of Crystal Growth. 124:723-729
Low pressure MOVPE has been used for the growth of 1.58 μm GRIN-SCH strained GaxIn1-xAs (x = 0.30) MQW laser structures. The GRIN-SCH region is a continuous grade between the quaternary compositions GaInAsP (λg = 1.07 μm) and GaInAsP (λg = 1.25
Publikováno v:
Materials Science and Engineering: B. 9:355-360
The epitaxial growth of long wavelength graded refractive index separate confinement heterostructure multiple quantum well (GRIN-SCH MQW) lasers by low pressure metal-organic vapour phase epitaxy is described. By varying the group III and group V gas
Autor:
C.J.G. Kirkby, R.C. Goodfellow, M.J. Goodwin, R.C. Morris, A.J. Moseley, M. Q. Kearly, Ian Bennion, J. Thompson
Publikováno v:
Journal of Lightwave Technology. 9:1639-1645
The design and performance of arrays of hybrid optoelectronic detector and modulator elements for use as optical input and output pads for chip- and board-level optical interconnects are discussed. The application of these interface arrays to specifi
Publikováno v:
Journal of Crystal Growth. 107:860-866
The growth, by MOVPE, and characterisation of multilayer reflective stacks have been examined. Reflectivities of 55%–60% into air have been obtained for relatively thin (7 period) structures using both GaInAsP/InP and GaAlInAs/InP material combinat
Publikováno v:
Journal of Crystal Growth. 108:203-218
Compound and orientation dependent epitaxy (CODE) is a novel MOVPE phenomenon, applicable to the single step growth of low-dimensional devices and reduced dimensional structures such as quantum wires and quantum dots. This phenomenon arises in the gr
Autor:
A.J. Moseley, M.J. Goodwin
Publikováno v:
Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.