Výsledky vyhledávání

Silicon Carbide Vertical JFET Operating at High Temperature

Autor: A.J. Hydes, K.P. Hilton, A.B. Horsfall, Christopher Mark Johnson, A.G. Munday, Nicolas G. Wright, Michael J. Uren, Konstantin Vassilevski, Irina P. Nikitina

Publikováno v: Materials Science Forum. :1063-1066

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p+-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normall

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5178086c64e42124b4f565d8517228e1
https://doi.org/10.4028/www.scientific.net/msf.600-603.1063

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High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

Autor: Konstantin Vassilevski, CM Johnson, Michael J. Uren, Nicholas G. Wright, Anthony O'Neill, A.G. Munday, Irina P. Nikitina, K.P. Hilton, Alton B. Horsfall, A.J. Hydes

Publikováno v: Materials Science Forum. :873-876

High voltage 4H-SiC Schottky diodes with single-zone junction termination extension (JTE) have been fabricated and characterised. Commercial 4H-SiC epitaxial wafers with 10, 20 and 45 +m thick n layers (with donor concentrations of 3×1015, 8×1014 a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9eafbb3a47c5554335e5dd8bf8b50da6
https://doi.org/10.4028/www.scientific.net/msf.556-557.873

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High Temperature Characterisation of 4H-SiC VJFET

Autor: A.J. Hydes, Alton B. Horsfall, Nicholas G. Wright, Konstantin Vassilevski, Michael J. Uren, A.G. Munday, CM Johnson, Praneet Bhatnagar, K.P. Hilton

Publikováno v: Materials Science Forum. :799-802

4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at drain voltage of 50 V drops down from 54 A/cm2 at room temperature to around 42 A/cm2 at 377 °C which is a 20 %

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a15a8351aa9a294f528420a39cf84ac
https://doi.org/10.4028/www.scientific.net/msf.556-557.799

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High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

Autor: Pallav Bhatnagar, K.P. Hilton, Alton B. Horsfall, A.G. Munday, Nicholas G. Wright, Michael J. Uren, CM Johnson, A.J. Hydes

Publikováno v: Materials Science Forum. :987-990

Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper presents circuit applications of normally-on SiC VFETs at temperatures exceeding 300°C. A DC-DC boost converter u

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a8be9c45551d7ed3f10c2841a7e5d539
https://doi.org/10.4028/www.scientific.net/msf.556-557.987

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High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

Autor: Konstantin Vassilevski, Irina P. Nikitina, A.G. Munday, CM Johnson, Anthony O'Neill, A.J. Hydes, Praneet Bhatnagar, K.P. Hilton, Michael J. Uren, Alton B. Horsfall, Nicholas A. Wright

Publikováno v: Materials Science Forum. :931-934

4H-SiC diodes with nickel silicide (Ni2Si) and molybdenum (Mo) Schottky contacts have been fabricated and characterised at temperature up to 400°C. Room temperature boron implantation has been used to form a single zone junction termination extensio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::da857ef267094c30e412906211c0fe90
https://doi.org/10.4028/www.scientific.net/msf.527-529.931

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Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing

Autor: Irina P. Nikitina, Konstantin Vassilevski, K.P. Hilton, A.J. Hydes, A. Masterton, Alton B. Horsfall, Michael J. Uren, C M Johnson, Anthony O'Neill, Nicholas G. Wright

Publikováno v: Semiconductor Science and Technology. 20:271-278

A graphite capping layer has been evaluated to protect the surface of patterned and selectively implanted 4H–SiC epitaxial wafers during post-implantation annealing. AZ-5214E photoresist was spun and baked in vacuum at temperatures ranging from 750

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ab953367f400de38700e868d22e381c9
https://doi.org/10.1088/0268-1242/20/3/003

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State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers

Publikováno v: IEEE Compound Semiconductor IC Symposium CSICS 2008
IEEE Compound Semiconductor IC Symposium CSICS 2008, Oct 2008, United States. pp 1-4

This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a9b5a2d5534a726ccc1698902dba301
https://doi.org/10.1109/csics.2008.39

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