Zobrazeno 1 - 10
of 106
pro vyhledávání: '"A.J. Botha"'
Publikováno v:
Koedoe: African Protected Area Conservation and Science, Vol 48, Iss 2, Pp 11-22 (2005)
The availability and abundance of surface water on the Manyeleti Game Reserve was quantified to provide information towards the development of a water provision policy. A total of 696 water source sites were located with a mean distance of 223.3 m ap
Externí odkaz:
https://doaj.org/article/e5764c66489b406e97e7b401a8af030d
Autor:
A.J. Botha
Publikováno v:
Verbum et Ecclesia, Vol 21, Iss 3 (2000)
The importance of Malachi 1 :2-5 towards understanding of the Book Malachi In the past years scholarly attention to the book of Malachi has been scant. The outstanding feature in most of the studies is the fact that only certain themes from the book
Externí odkaz:
https://doaj.org/article/104f83240abe4528b99ab6e7eb5eda55
Akademický článek
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Autor:
Snježana Kazazić, Vladimir Bermanec, Goran Kniewald, A.J. Botha, Željka Fiket, Chantelle Venter, Jasna Hrenović
Publikováno v:
Anales del Instituto de la Patagonia v.47 n.3 2019
SciELO Chile
CONICYT Chile
instacron:CONICYT
Anales del Instituto de la Patagonia
SciELO Chile
CONICYT Chile
instacron:CONICYT
Anales del Instituto de la Patagonia
La aparicion y propagacion de la resistencia a los antibioticos se considera un proceso muy complejo, con muchos factores que afectan a los mecanismos de resistencia, incluidos los metales. Con el fin de comprender plenamente la propagacion de la res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1f5552c6f736ce4803a44341cc45563
http://www.scielo.cl/scielo.php?script=sci_arttext&pid=S0718-686X2019000300049
http://www.scielo.cl/scielo.php?script=sci_arttext&pid=S0718-686X2019000300049
Autor:
E.G. Njoroge, A.J. Botha, C.C. Theron, Jacobus J. Terblans, X.-L. Yan, N.G. van der Berg, Hameda A. Abrass
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 359:85-88
The reaction between a thin film (126 nm) of Co and Si has been studied at 450 °C for 24 h under high vacuum conditions, in the presence of a FeZr barrier layer. Without a diffusion barrier layer between Co and Si, Co 2 Si forms at 350 °C as the in
Autor:
Elke Wendler, Thabsile Theodora Thabethe, R.J. Kuhudzai, N.G. van der Berg, O.S. Odutemowo, A.J. Botha, C.C. Theron, E. Friedland, Johan B. Malherbe, Thulani Thokozani Hlatshwayo
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 354:23-27
This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the surface. The surface effects were
Autor:
Elke Wendler, A.V. Buys, C.C. Theron, Thulani Thokozani Hlatshwayo, R.J. Kuhudzai, N.G. van der Berg, A.J. Botha, Johan B. Malherbe, Werner Wesch
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 332:251-256
The recrystallization and subsequent crystal growth during annealing of amorphous surface layers on 6H-SiC produced by ion implantation is investigated. Amorphous surface layers were produced by ion implantation of 360 keV ions of iodine, silver, xen
Autor:
Werner Wesch, E. F. da Silveira, R.J. Kuhudzai, E. Friedland, A.J. Botha, N.G. van der Berg, Elke Wendler, Purushottam Chakraborty, Thulani Thokozani Hlatshwayo, Johan B. Malherbe
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 315:136-141
SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive fission products in the
Publikováno v:
Applied Surface Science. 258:5561-5566
Thermal etching of SiC or its decomposition at high temperatures is of significance because of the many industrial applications of SiC at high temperatures. The effect of vacuum annealing at relatively high temperatures (1200–1800 °C) on the surfa
Autor:
Linda C. Prinsloo, N.G. van der Berg, Thulani Thokozani Hlatshwayo, A.J. Botha, Johan B. Malherbe, Werner Wesch, Elke Wendler
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 274:120-125
Annealing and diffusion behavior of implanted silver in 6H–SiC has been investigated using Rutherford backscattering spectroscopy (RBS), channeling, Raman spectroscopy and scanning electron microscopy (SEM) techniques. Silver (109Ag+) ions with an