Zobrazeno 1 - 10
of 89
pro vyhledávání: '"A.J. Auberton"'
Publikováno v:
Microelectronic Engineering. 36:387-390
The behavior under irradiation of a new SOI material, UNIBOND ® , is compared to the behavior of SIMOX material through the radiative response of MOS transistors processed on these two substrates. From these results we deduce the trap properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b18810aa5f0d82acc259e85b936e1e5d
https://doi.org/10.1016/s0167-9317(97)00086-5
https://doi.org/10.1016/s0167-9317(97)00086-5
Publikováno v:
IEEE Transactions on Nuclear Science. 42:2108-2113
Electron and hole trapping and detrapping have been investigated in new SIMOX buried oxides of different thicknesses (80 to 400 nm) after X-ray irradiation. Isochronal annealing and thermally stimulated current results are presented along with trap d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73dd31c1865b1af607005473856c28fd
https://doi.org/10.1109/23.489260
https://doi.org/10.1109/23.489260
Publikováno v:
IEEE Transactions on Electron Devices. 42:713-719
A systematic experimental investigation of the influence of the silicon film thickness on the properties of accumulation-mode SOI MOSFET's has been performed, and the relevant original results are presented. Interface coupling mechanisms and their ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdff89a887809cd2aff52e57b9e6b80e
https://doi.org/10.1109/16.372076
https://doi.org/10.1109/16.372076
Publikováno v:
IEEE Transactions on Electron Devices. 41:109-112
A study of the latch and breakdown phenomena in thin film N- and P-channel SOI MOSFET's is performed as a function of temperature. For P-type MOSFET's, for which no investigation of the parasitic bipolar transistor has been carried out, we show that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caa2db50e6f6424bb1bad27c20f3fee1
https://doi.org/10.1109/16.259627
https://doi.org/10.1109/16.259627
Autor:
O. Flament, D. Herve, O. Musseau, A.J. Auberton-Herve, B. Giffard, M. Raffaelli, J. Margail, P. Bonnel, Jean-Luc Leray
Publikováno v:
IEEE Transactions on Nuclear Science. 39:2132-2138
SIMOX (separation by implantation of oxygen) devices have been irradiated at up to 100 Mrad under different positive and negative back-gate voltages. At low cumulated dose, hole trapping is controlled by external applied field. For higher doses up to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eba723e0ae41b2c4bcfe5981cd280e7
https://doi.org/10.1109/23.211413
https://doi.org/10.1109/23.211413
Publikováno v:
Scopus-Elsevier
Systematic aging experiments have been performed on Silicon-On-Insulator p-MOSFET's synthesized by oxygen implantation (SIMOX). It is shown that the major degradation mechanism consists in electron injection in the buried oxide (BOX), even under norm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbd136fb04a75af1a306b0938c7598df
https://doi.org/10.1016/0167-9317(92)90477-9
https://doi.org/10.1016/0167-9317(92)90477-9
Parasitic transients induced by floating substrate effect and bipolar transistor on SOI technologies
Publikováno v:
Microelectronic Engineering. 15:199-202
In this paper, we are dealing with consequences of the existence of parasitic bipolar[1] and kink effect[2] on transients occuring in SOI digital circuits. The two effects described below have been studied on NMOS transistors on SOI technology. To fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b1c76f4fb81403e9450fcc08d04c928
https://doi.org/10.1016/0167-9317(91)90212-v
https://doi.org/10.1016/0167-9317(91)90212-v
Autor:
J. Margail, J.F. Pere, Y.M. Coic, B. Giffard, M. Bruel, J.L. Leray, A.J. Auberton-Herve, E. Dupont-Nivet, M. Raffaelli
Publikováno v:
IEEE Transactions on Nuclear Science. 37:2013-2019
Hardened CMOS silicon-on-insulator (SOI) 29101 microprocessor elementary cells and transistors were irradiated at levels between 10 Mrad(SiO/sub 2/) and 1 Grad(SiO/sub 2/) (/sup 60/Co and 10-keV X-rays). SIMOX buried oxide behavior in the range of 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64f70111c5b04151e59021a0df22a6d2
https://doi.org/10.1109/23.101223
https://doi.org/10.1109/23.101223
Autor:
A.J. Auberton-Herve
Publikováno v:
International Electron Devices Meeting. Technical Digest.
The continuing volume growth of portable systems with their increasing demand for better performance and autonomy makes SOI a very attractive approach for large volume IC's production dedicated to low voltage, low power, high speed systems. The capab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fea4607bfe1aa64ae171b67ec39d2c34
https://doi.org/10.1109/iedm.1996.554131
https://doi.org/10.1109/iedm.1996.554131
Publikováno v:
IEEE International SOI Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9c0297b692960060fc074b8007a7ece
https://doi.org/10.1109/soi.1992.664820
https://doi.org/10.1109/soi.1992.664820