Zobrazeno 1 - 10
of 25
pro vyhledávání: '"A.I. Manilov"'
Autor:
Alex Rozhin, A.I. Manilov, B.B. Sus, A.V. Kozinetz, A.S. Topchylo, S. V. Litvinenko, Valeriy A. Skryshevsky
an innovative application of deep barrier silicon structures for sensory devices with photoelectrical transformation has been suggested. The principal possibility of the photovoltaic transducer implementation for identification of metallic and semico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::444502044df83170dfeb00760ba97298
https://publications.aston.ac.uk/id/eprint/43056/1/Recognition_of_metallic_and_semiconductor_single.pdf
https://publications.aston.ac.uk/id/eprint/43056/1/Recognition_of_metallic_and_semiconductor_single.pdf
Autor:
Alex Rozhin, S. V. Litvinenko, Valeriy A. Skryshevsky, Mohammed Al Araimi, A.V. Kozinetz, A.I. Manilov
Publikováno v:
Current Applied Physics
We identified different nano-carbon species such as graphene nanoplatelets, graphite flakes and carbon nanotubes dispersed in N-methyl-2-pyrrolidone using a novel sensor structure based on a “deep” silicon barrier working as a photoelectrical tra
Publikováno v:
Handbook of Research on Emerging Developments and Environmental Impacts of Ecological Chemistry
Remote sensing is an efficient way to detect environmentally vulnerable terrain, where waste chemicals and excess fertilizers must result to considerable pollution of soil and groundwater. The indicators of such vulnerable formations were analyzed an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c5d8554d30b95fee2f780e99ffdc7d9
https://doi.org/10.4018/978-1-7998-1241-8.ch015
https://doi.org/10.4018/978-1-7998-1241-8.ch015
Publikováno v:
2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering (UKRCON).
The possibility of application of silicon wafer surface treatment by iron (III) chloride solution as the instrument to determine charge carriers’ lifetime is investigated. The measured lifetimes demonstrated essential growth with increase of Fe3+ i
Autor:
A.I. Manilov
Publikováno v:
2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO).
Hydrogen source and the model of hydrogen energy system based on chemical reaction of silicon nanopowders with water are described. The ways of hydrogen bonding and extraction are analyzed. The problems of general hydrogen output for porous powders,
Autor:
Oleksandr Ye. Lushkin, A.I. Manilov, Oleksandr M. Kostiukevych, Yuriy G. Shulimov, Vasyl V. Lendiel, Valeriy A. Skryshevsky
Publikováno v:
Journal of Nano Research. 39:114-120
I-V, C-V characteristics and current change kinetics of the Ni-TiOx-p/Si-Ni heterojunction were studied under different speeds of voltage sweep, in darkness and under illumination of various spectral regions. It was found that Ni-TiOx-p/Si-Ni heteroj
Autor:
Sergii Tutashkonko, Tetyana Nychyporuk, A.I. Manilov, Valeriy A. Skryshevsky, Vladimir Lysenko, Gulshat Amirkhanova, G.K. Mussabek, Sergei V Litvinenko, Yerkin Shabdan, Sergei Alekseev
Publikováno v:
Nanomaterials, Vol 10, Iss 1413, p 1413 (2020)
Nanomaterials
Volume 10
Issue 7
Nanomaterials, MDPI, 2020, 10, ⟨10.3390/nano10071413⟩
Nanomaterials, MDPI, 2020, 10 (7), pp.1413. ⟨10.3390/nano10071413⟩
Nanomaterials
Volume 10
Issue 7
Nanomaterials, MDPI, 2020, 10, ⟨10.3390/nano10071413⟩
Nanomaterials, MDPI, 2020, 10 (7), pp.1413. ⟨10.3390/nano10071413⟩
Hydrogen generation rate is one of the most important parameters which must be considered for the development of engineering solutions in the field of hydrogen energy applications. In this paper, the kinetics of hydrogen generation from oxidation of
Autor:
Valeriy A. Skryshevsky, A.I. Manilov, Sergei Alekseev, А. V. Kozinets, S. V. Litvinenko, Vladimir Lysenko
Publikováno v:
Journal of Nano- and Electronic Physics. 12:03015-1
Publikováno v:
Sensor Electronics and Microsystem Technologies. 5:28-38
An island type palladium film — silicon diode hydrogen sensor has been developed applying thin (15-75 nm) nanoporous silicon as an intermediate sensitive layer. Using a thermal Pd deposition into porous silicon allows to vary the size and morpholog
Autor:
Valeriy A. Skryshevsky, A.I. Manilov
Publikováno v:
Materials Science and Engineering: B. 178:942-955
a b s t r a c t This review is devoted to summarising the hydrogen-assisted properties and applications of porous silicon (PS). The role of hydrogen as an intermediate product in silicon porosification technology is accentuated. The regularities of h