Zobrazeno 1 - 10
of 67
pro vyhledávání: '"A.I. Liptuga"'
Autor:
V.I. Pipa, A.I. Liptuga
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 2, Pp 136-140 (2020)
Presented in this paper are the results of theoretical studying the rotational motion of a heated solid-state plate under action of its coherent asymmetric thermal radiation. Thin plane-parallel plates are considered as objects, in which the coherenc
Externí odkaz:
https://doaj.org/article/5852806ec8494205982f9819d73071e2
Autor:
A.I. Liptuga, V.I. Pipa
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 2, Pp 136-140 (2020)
Presented in this paper are the results of theoretical studying the rotational motion of a heated solid-state plate under action of its coherent asymmetric thermal radiation. Thin plane-parallel plates are considered as objects, in which the coherenc
Autor:
A.I. Liptuga, Nickolai I. Klyui, Bingbing Liu, Mykhailo Dusheiko, Anatolii Lukianov, V.P. Kasatkin, V.B. Lozinskii, Bo Sha
Publikováno v:
Optical Materials. 88:445-450
A technology for preparation of amorphous nonstoichiometric hydrogenated silicon carbide (a-SixC1-x:H) films using the PE-CVD method has been developed. Such films with refractive index n = 1.8–2.1 are suitable to obtain antireflection effect on ge
Autor:
S. E. Pritchin, Nickolai I. Klyui, V.B. Lozinskii, A.I. Liptuga, M. G. Kogdas, A. P. Oksanych, V. N. Dikusha, A. L. Perekhrest
Publikováno v:
Semiconductors. 51:305-309
The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treat
Autor:
S. E. Pritchin, A.I. Liptuga, V.B. Lozinskii, A. P. Oksanich, V.O. Yukhymchuk, Nickolai I. Klyui, F. V. Fomovskii
Publikováno v:
Scopus-Elsevier
Ukrainian Journal of Physics; Vol. 59 No. 11 (2014); 1093
Український фізичний журнал; Том 59 № 11 (2014); 1093
Ukrainian Journal of Physics; Vol. 59 No. 11 (2014); 1093
Український фізичний журнал; Том 59 № 11 (2014); 1093
Initial untreated crystals of semiinsulating tellurium-compensated GaAs are shown to degrade considerably less after HF treatments in comparison with the corresponding specimens doped with chrome, which testifies to a substantial influence of the com
Publikováno v:
Infrared Physics & Technology. 55:522-526
We present the results of theoretical and experimental investigation of interference effects of negative luminescence (NL) in planar resonator structures with an optically thin active semiconductor layer, as well as association of those effects with
Publikováno v:
Optics Communications. 276:131-134
We investigated, both theoretically and experimentally, the polarization properties of coherent thermal radiation from thin semiconductor planar layers in a weak external magnetic field. For the Faraday configuration, it is shown that the spectrum of
Publikováno v:
Optics Communications. 260:607-613
We investigated, both theoretically and experimentally, the dependence of the intensity of spectral lines of thermal radiation from plane-parallel semiconductor resonator structures on their optical parameters (volume absorption and coefficients of r
Publikováno v:
Infrared Physics & Technology. 47:267-272
We present the results of our investigations of a multifunctional emitting unit based on p+–p–p+-Ge structure with anisotropic conductivity induced by a magnetic field. It is shown that the presence of complex controlled concentration profiles in
Autor:
V. S. Rad'ko, Yu.G. Ptushinskii, M. Yu. Vedula, V. S. Lysenko, A.I. Liptuga, L. V. Levash, V. B. Samoilov
Publikováno v:
Heat Transfer Research. 36:21-27