Zobrazeno 1 - 10
of 38
pro vyhledávání: '"A.G.K. Lutsch"'
Publikováno v:
Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting.
Losses in power electronic switches can be reduced by using nonlinear voltage-dependent capacitors as turn-off snubbers. It has been discovered that distinct voltage-dependent events occur in the dielectric of the capacitors when placed under voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b70241530abb253751cd702116df6fa
https://doi.org/10.1109/ias.1988.25133
https://doi.org/10.1109/ias.1988.25133
Autor:
A.G.K. Lutsch, D.R. Oosthuizen
Publikováno v:
Microelectronics Journal. 16:5-16
The profile of the mask edge during ion implantation determines the electrical field in the critical drain region of a MOS-transistor. Equal ion density lines are computed for various mask edges for the example of boron implanted into silicon at 70 k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6da7cc3bd59f2f7683470e0522ccedcf
https://doi.org/10.1016/s0026-2692(85)80066-5
https://doi.org/10.1016/s0026-2692(85)80066-5
Publikováno v:
Le Journal de Physique Colloques. 44:C5-461
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::832ad76fafeaecfae0e40111a07c47d3
https://doi.org/10.1051/jphyscol:1983568
https://doi.org/10.1051/jphyscol:1983568
Autor:
A.G.K. Lutsch, H. Runge
Publikováno v:
Microelectronics Journal. 14:15-20
For the implantation of boron into silicon through submicrometre-width slits (of the order of 0.5 μm) at an energy of 1 MeV, the maximum ion concentration at a distance equal to the projected range does not reach, even at the centre, the correspondi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f9f37d9829159aed29bf7abc66d0560
https://doi.org/10.1016/s0026-2692(83)80165-7
https://doi.org/10.1016/s0026-2692(83)80165-7
Publikováno v:
Microelectronics Journal. 12:25-29
The theoretical distribution of implanted Boron in Silicon as computed by Gibbons et al. shows physically unrealistic negative values for energies higher than 100 keV. The distribution for B in Si has been measured by Auger Electron Spectroscopy for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0630de21b6b5dafb660f030552e4e9
https://doi.org/10.1016/s0026-2692(81)80469-7
https://doi.org/10.1016/s0026-2692(81)80469-7
Publikováno v:
IEEE Transactions on Components, Hybrids, and Manufacturing Technology. 12:352-357
A method for selecting ferroelectric capacitors as nonlinear components for application in turn-off snubber circuits for power electronic switches is investigated. By initiating, without destroying, localized events in the dielectric layer of a multi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f407ee1d531b49e8b1549ea20f9855
https://doi.org/10.1109/33.35482
https://doi.org/10.1109/33.35482
Autor:
A.G.K. Lutsch
Publikováno v:
Microelectronics Journal. 14:5-13
Most statistics for predicting the impurity distribution of ions implanted in solids use a Gaussian distribution multiplied by a polynomial. A range statistics is proposed using a Gaussian and elements of a Fourier series, which should be useful, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7d651866adedae98b72d853ce6a4caa
https://doi.org/10.1016/s0026-2692(83)80164-5
https://doi.org/10.1016/s0026-2692(83)80164-5
Publikováno v:
Microelectronics Journal. 14:27-35
A technique is described of the modification of a standard bipolar process by the addition of a single ion implantation step with one extra photo mask to give a relatively high speed-power product and a high yield of analog compatible I 2 L circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21db71a0c19a460f280e54270f46e697
https://doi.org/10.1016/s0026-2692(83)80220-1
https://doi.org/10.1016/s0026-2692(83)80220-1
Publikováno v:
Microelectronics Journal. 16:41-46
Electron beam annealing has, after an active period of research, become an established technology in the production of semiconductor devices, since high quality restoration practically without out-diffusion, can be achieved. Many universities and res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::493d68b88ebdeccedbbfa6f72caf2f58
https://doi.org/10.1016/s0026-2692(85)80123-3
https://doi.org/10.1016/s0026-2692(85)80123-3
Autor:
A.G.K. Lutsch, D.N. Oliver
Publikováno v:
Microelectronics Journal. 14:21-34
When implanting ions through a window the equidensity lines of ions are influenced by higher moments of the impurity ion distribution versus depth into the substrate. This effect is particularly noticeable if the ions are light and the ion energy is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a2fefe81d8a5d8c982fd59025b6e9f7
https://doi.org/10.1016/s0026-2692(83)80166-9
https://doi.org/10.1016/s0026-2692(83)80166-9