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Autor:
E. Paparazzo
Publikováno v:
Surface Science. 273:L477-L479
A paper by Schrott et al. [Surf. Sci. 250 (1991) 139] on the Auger Cr LVV spectra of Al/Cr alloys is commented on. The area of major disagreement regards the hypothesis that Al-alloying suppresses the Cr LVV decay. It is pointed out that the surface
Publikováno v:
Solid State Communications. 77:699-702
We studied the Cu 2p x-ray absorption spectra of the superconductor La2−xSrxCuO4 in the doping regime x=0-0.6 and found that the intensity of the satellite peak is a reliable measure of the doping-induced hole concentration. From the Cu 2p absorpti
Autor:
Shih-Hung Chen, T.D. Happ, B. Yee, Hsiang-Lan Lung, Shoaib Hasan Zaidi, Eric A. Joseph, Matthew J. Breitwisch, R. Bergmann, Chung H. Lam, S. Raoux, A.G. Schrott, Y. Zhu, C.-F. Chen, R. Dasaka
Publikováno v:
2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
In this paper, a detailed study on the etching characteristics of nitrogen doped Ge2Sb2Te5 (N:GST) thin films is performed to elucidate the relationship between pattern fidelity and material modification. Multiple methodologies ranging from physical
Autor:
T.D. Happ, J.B. Phipp, Min Yang, S. Raoux, R. Cheek, A.G. Schrott, Shoaib Hasan Zaidi, Y. Zhu, Y.-C. Chen, M. Lamorey, Hsiang-Lan Lung, T. Nirschl, Ming-Hsiu Lee, Bipin Rajendran, Matthew J. Breitwisch, R. Bergmann, C.-F. Chen, Geoffrey W. Burr, Chung H. Lam, Shih-Hung Chen, Eric A. Joseph
Publikováno v:
2007 IEEE International Electron Devices Meeting.
We discuss novel multi-level write algorithms for phase change memory which produce highly optimized resistance distributions in a minimum number of program cycles. Using a novel integration scheme, a test array at 4 bits/cell and a 32 kb memory page
Publikováno v:
Surface Science Letters. 250:A289
Autor:
A.G. Schrott, Jack M. Blakely
Publikováno v:
Surface Science. 150:L77-L81
Autor:
A.G. Schrott, S.C. Fain
Publikováno v:
Surface Science. 123:204-222
Autor:
A.G. Schrott, Samuel C. Fain
Publikováno v:
Surface Science. 111:39-52
The reaction between Si(111) and nitrogen atoms has been investigated by LEED, Auger, and electron energy loss (ELS) techniques. The early stage of the reaction at 850-1050 C involves the formation of a chemically reacted monolayer which grows in isl
Publikováno v:
Surface Science. 123:223-230
Previous studies of the reaction of nitrogen atoms with Si(111) single crystal surfaces have been extended to the Si(100) surface. Results for reactions at 850 ≲ T 850°C is Si2N. Reactions carried out at T ≲ 800°C produce Auger and ELS signals