Zobrazeno 1 - 10
of 22
pro vyhledávání: '"A.G. Munday"'
Autor:
A.J. Hydes, K.P. Hilton, A.B. Horsfall, Christopher Mark Johnson, A.G. Munday, Nicolas G. Wright, Michael J. Uren, Konstantin Vassilevski, Irina P. Nikitina
Publikováno v:
Materials Science Forum. :1063-1066
Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p+-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5178086c64e42124b4f565d8517228e1
https://doi.org/10.4028/www.scientific.net/msf.600-603.1063
https://doi.org/10.4028/www.scientific.net/msf.600-603.1063
Autor:
Konstantin Vassilevski, CM Johnson, Michael J. Uren, Nicholas G. Wright, Anthony O'Neill, A.G. Munday, Irina P. Nikitina, K.P. Hilton, Alton B. Horsfall, A.J. Hydes
Publikováno v:
Materials Science Forum. :873-876
High voltage 4H-SiC Schottky diodes with single-zone junction termination extension (JTE) have been fabricated and characterised. Commercial 4H-SiC epitaxial wafers with 10, 20 and 45 +m thick n layers (with donor concentrations of 3×1015, 8×1014 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eafbb3a47c5554335e5dd8bf8b50da6
https://doi.org/10.4028/www.scientific.net/msf.556-557.873
https://doi.org/10.4028/www.scientific.net/msf.556-557.873
Autor:
A.J. Hydes, Alton B. Horsfall, Nicholas G. Wright, Konstantin Vassilevski, Michael J. Uren, A.G. Munday, CM Johnson, Praneet Bhatnagar, K.P. Hilton
Publikováno v:
Materials Science Forum. :799-802
4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at drain voltage of 50 V drops down from 54 A/cm2 at room temperature to around 42 A/cm2 at 377 °C which is a 20 %
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a15a8351aa9a294f528420a39cf84ac
https://doi.org/10.4028/www.scientific.net/msf.556-557.799
https://doi.org/10.4028/www.scientific.net/msf.556-557.799
Autor:
Pallav Bhatnagar, K.P. Hilton, Alton B. Horsfall, A.G. Munday, Nicholas G. Wright, Michael J. Uren, CM Johnson, A.J. Hydes
Publikováno v:
Materials Science Forum. :987-990
Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper presents circuit applications of normally-on SiC VFETs at temperatures exceeding 300°C. A DC-DC boost converter u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8be9c45551d7ed3f10c2841a7e5d539
https://doi.org/10.4028/www.scientific.net/msf.556-557.987
https://doi.org/10.4028/www.scientific.net/msf.556-557.987
Autor:
Konstantin Vassilevski, Irina P. Nikitina, A.G. Munday, CM Johnson, Anthony O'Neill, A.J. Hydes, Praneet Bhatnagar, K.P. Hilton, Michael J. Uren, Alton B. Horsfall, Nicholas A. Wright
Publikováno v:
Materials Science Forum. :931-934
4H-SiC diodes with nickel silicide (Ni2Si) and molybdenum (Mo) Schottky contacts have been fabricated and characterised at temperature up to 400°C. Room temperature boron implantation has been used to form a single zone junction termination extensio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da857ef267094c30e412906211c0fe90
https://doi.org/10.4028/www.scientific.net/msf.527-529.931
https://doi.org/10.4028/www.scientific.net/msf.527-529.931
Autor:
Konstantin V. Vassilevski, I. Nikitina, A.B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Keith P. Hilton, A.G. Munday, A.J. Hydes, Michael J. Uren, C. Mark Johnson
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c72b6fdf095fd4e764351b37ee8211c
https://doi.org/10.4028/0-87849-442-1.873
https://doi.org/10.4028/0-87849-442-1.873
Autor:
Praneet Bhatnagar, Nicolas G. Wright, A.B. Horsfall, Konstantin V. Vassilevski, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4735207968dcbad12a2ef3a08b8af31
https://doi.org/10.4028/0-87849-442-1.799
https://doi.org/10.4028/0-87849-442-1.799
Autor:
Konstantin V. Vassilevski, I. Nikitina, Praneet Bhatnagar, A.B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes, C. Mark Johnson
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab7e48e269f10b3f43b4601c73ee0c7
https://doi.org/10.4028/0-87849-425-1.931
https://doi.org/10.4028/0-87849-425-1.931
Autor:
R.S. Balmer, Y. Han, Ian Harrison, Trevor Martin, K.P. Hilton, Michael J. Uren, Michael W. Fay, A.G. Munday, David J. Wallis, Paul D. Brown
Publikováno v:
Journal of Applied Physics. 103:074501
The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07c112a5d008ac0c78164df24ece20a9
https://doi.org/10.1063/1.2890978
https://doi.org/10.1063/1.2890978