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pro vyhledávání: '"A.G. Cullis"'
Autor:
A.G. Cullis
This volume contains invited and contributed papers at the conference on Microscopy of Semiconducting Materials which took place on 21–23 March 1983 in St Cathernine's College, Oxford. The conference was the third in the series devoted to advances
Autor:
A.G. Cullis, P.A. Midgley
Modern electronic devices rely on ever-greater miniaturization of components, and semiconductor processing is approaching the domain of nanotechnology. Studies of devices in this regime can only be carried out with the most advanced forms of microsco
Publikováno v:
Sensors and Actuators B: Chemical. 142:273-279
In this paper a highly sensitive glucose biosensor is proposed based on a polysilicon (poly-Si) wire structure coated with 3-aminopropyltriethoxysilane (γ-APTES) mixed with polydimethylsiloxane-treated hydrophobic fumed silica nanoparticles (NPs) as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d8427f3528f5d751f1af0d2d482be94
https://doi.org/10.1016/j.snb.2009.08.003
https://doi.org/10.1016/j.snb.2009.08.003
Autor:
A.G. Cullis
Publikováno v:
MRS Bulletin. 21:21-26
The growth of semiconductor heteroepitaxial layers is assuming ever greater importance due to the demands of modern electronic-device fabrication. Furthermore although low-strain heterosystems such as AlGaAs/GaAs remain the basis of many device struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f659ec5c67ffe810344095b426458b61
https://doi.org/10.1557/s0883769400035296
https://doi.org/10.1557/s0883769400035296
Autor:
Wen-Chang Hung, Po-Yen Hsu, Shin-Hsin Hu, You-Lin Wu, Chung-Ping Hsu, Shi-Ting Lin, A.G. Cullis
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
In this paper, we proposed a polysilicon (poly-Si) wire based biosensor for the detection of glucose and matrix metalloproteinase (MMP) extracted from cancer cells. A focus-ion-beam (FIB) processed capillary atomic-force-microscopy (C-AFM) tip was us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f56c80fa40a46d5ed001e09b104a3cc
https://doi.org/10.1109/icsict.2008.4735100
https://doi.org/10.1109/icsict.2008.4735100
Publikováno v:
Journal of Non-Crystalline Solids. :263-266
R.f. sputter deposition has been used to manufacture amorphous Ge1−xSnx fims with x upto 0.21 and 0.78 for substrates held at 300K and 77K respectively. Futher increases in Sn concentration cause two phase formation with an increasing size and quan
Externí odkaz:
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https://doi.org/10.1016/0022-3093(90)90929-g
https://doi.org/10.1016/0022-3093(90)90929-g
Autor:
R Beanland, A.G Cullis
Publikováno v:
Microscopy of Semiconducting Materials ISBN: 9780429176135
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fef5f1c32daa54beda2e680a1cd38ab1
https://doi.org/10.1201/9781482268690-9
https://doi.org/10.1201/9781482268690-9
Autor:
R Beanland, A.G Cullis
With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a082c7ee45b8472603baca2557c9f8
https://doi.org/10.1201/9781482268690
https://doi.org/10.1201/9781482268690