Zobrazeno 1 - 10
of 215
pro vyhledávání: '"A.F.M. Anwar"'
Publikováno v:
Solid-State Electronics. 50:1041-1045
We present a modified expression for PhiB that takes into account the effect of total polarization and the 2DEG concentration in GaN at the GaN/AlGaN heterointerface through the incorporation of Schottky barrier lowering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dae9fd2a12cf2748e7216e735ca2a7a
https://doi.org/10.1016/j.sse.2006.04.011
https://doi.org/10.1016/j.sse.2006.04.011
Publikováno v:
Solid-State Electronics. 50:1051-1056
This paper presents simulated DC characteristics of an AlGaN/GaN HEMT along with corroborating experimental measurements for validation. GaN-based HFETs are vigorously pursued for possible applications in high power presented in I. Daumiller et al. (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71a40817797a38ebb028f8d34d4182be
https://doi.org/10.1016/j.sse.2006.04.014
https://doi.org/10.1016/j.sse.2006.04.014
Publikováno v:
Solid-State Electronics. 48:1849-1853
The dependence of gain compression on the Al-mole fraction and the thickness of the AlGaN barrier layer are reported for typical undoped supply layer AlGaN/GaN HFETs using a physics-based model. The gain compression is calculated using a large signal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f3f436c7d2c4619ba7059fe0114af17
https://doi.org/10.1016/j.sse.2004.05.025
https://doi.org/10.1016/j.sse.2004.05.025
Autor:
A.F.M. Anwar, Syed S. Islam
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:853-859
SPICE model parameters are extracted from reported experimental data. The model is implemented in the Cadence Affirma Analog Circuit Design Environment and Spectre simulator is used to simulate class-E power amplifier and ring voltage controlled osci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2abe1474071087f7fe9df5d04db982cd
https://doi.org/10.1142/s0129156404002946
https://doi.org/10.1142/s0129156404002946
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:750-755
The dependence of microwave performance of GaN/AlGaN High Electron Mobility Transistors (HEMTs), namely the unity gain current cut-off frequency (fT) and the maximum oscillation frequency (fMAX), are reported as a function of the mole fraction of Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::186d56cc7ce3cc18474f2d1cb5b5b8a1
https://doi.org/10.1142/s0129156404002788
https://doi.org/10.1142/s0129156404002788
Publikováno v:
IEEE Transactions on Electron Devices. 51:846-853
A physics-based model for GaN MESFETs is developed to determine the frequency dispersion of output resistance and transconductance due to traps. The equivalent circuit parameters are obtained by considering the physical mechanisms for current collaps
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71ef699feee8e075b95b4d3cdf0d5ed6
https://doi.org/10.1109/ted.2004.829620
https://doi.org/10.1109/ted.2004.829620
Autor:
A.F.M. Anwar, Syed S. Islam
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 52:1229-1236
RF power performances of GaN MESFETs incorporating self-heating and trapping effects are reported. A physics-based large-signal model is used, which includes temperature dependences of transport and trapping parameters. Current collapse and dc-to-RF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63e1b72738b9aaceb545c458ae33f1d6
https://doi.org/10.1109/tmtt.2004.825662
https://doi.org/10.1109/tmtt.2004.825662
Autor:
Kuo-Wei Liu, A.F.M. Anwar
Publikováno v:
Solid-State Electronics. 47:763-768
An analytical model to evaluate device’s quantum well (QW) properties, current–voltage (I–V) characteristics, smallsignal parameters and noise property for InAlAs/InGaAs/InAlAs/InP high electron mobility transistors is presented.A self-consiste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b14e6d02b9edb5cf6a5215309efd4bf
https://doi.org/10.1016/s0038-1101(02)00321-0
https://doi.org/10.1016/s0038-1101(02)00321-0
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 51:677-683
Hawkins' isothermal model developed to study noise in bipolar junction transistors (BJTs) is modified to investigate bias-dependent noise in heterojunction bipolar transistors (HBTs) by incorporating thermal effects. It is shown that the inclusion of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22690316d4a7e45dc900f512d79870d1
https://doi.org/10.1109/tmtt.2003.808699
https://doi.org/10.1109/tmtt.2003.808699
Publikováno v:
Solid-State Electronics. 47:333-337
A quantum mechanical analysis of the gate current and trapped charge inside oxide layer of an enhancement type MOSFET has been presented in this paper. The effects of the impurity atoms inside oxide layer on the gate current and trapped charge have b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d4598ed2c6e9b9f3256c1d2f0641f9c
https://doi.org/10.1016/s0038-1101(02)00215-0
https://doi.org/10.1016/s0038-1101(02)00215-0