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pro vyhledávání: '"A.E. Bel"'
Autor:
A.E. Belyaev
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 22, Iss 1, Pp 11-18 (2019)
The method of processing the data of electrophysical investigations of ohmic contacts has been developed. It allows obtaining more accurate results of measuring the contact resistance and additional information by analyzing the statistical and spatia
Externí odkaz:
https://doaj.org/article/d534034385f645c3976dc6dc418b53ee
Publikováno v:
Atherosclerosis Supplements. 6:68
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 1, Pp 5-40 (2018)
This review is devoted to presentation and analysis of physical mechanisms of ohmic contacts formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched for the
Externí odkaz:
https://doaj.org/article/e20d9c3f7741464ab9a9573664b43fa1