Zobrazeno 1 - 10
of 18
pro vyhledávání: '"A.D. Tipton"'
Autor:
Paul E. Dodd, Dolores A. Black, A.D. Tipton, M.A. Xapsos, Daniel M. Fleetwood, William H. Robinson, Jeffrey D. Black, Ronald D. Schrimpf, Kevin M. Warren, Hak Kim, M. Friendlich, Dennis R. Ball, Nadim F. Haddad, Robert A. Reed
Publikováno v:
IEEE Transactions on Nuclear Science. 55:2943-2947
A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell upset patterns for dir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5c4c1e7f4fcaee1769fcdee60782085
https://doi.org/10.1109/tns.2008.2007231
https://doi.org/10.1109/tns.2008.2007231
Autor:
Jeffrey D. Black, Xiaowei Deng, A.D. Tipton, Hak Kim, Robert Baumann, Jonathan A. Pellish, Robert A. Weller, Michael J. Campola, Robert A. Reed, M.A. Xapsos, M. Friendlich, Andrew Marshall, Marcus H. Mendenhall, Ken LaBel, Christina Seidleck, Ronald D. Schrimpf, J.M. Hutson
Publikováno v:
IEEE Transactions on Nuclear Science. 55:2880-2885
The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the orientation of the device during irradiation. The response depends on the direction of the inciden
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ed44d97cfe9ba8be39eb191259667ab
https://doi.org/10.1109/tns.2008.2006503
https://doi.org/10.1109/tns.2008.2006503
Autor:
Ronald D. Schrimpf, Marcus H. Mendenhall, Robert A. Weller, A.D. Tipton, Gyorgy Vizkelethy, Akil K. Sutton, R.M. Diestelhorst, G. Espinel, Paul W. Marshall, John D. Cressler, Jonathan A. Pellish, Brian D. Sierawski, Robert A. Reed
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3259-3264
The probability of proton-induced multiple-bit upset (MBU) has increased in highly-scaled technologies because device dimensions are small relative to particle event track size. Both proton-induced single event upset (SEU) and MBU responses have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190043d0f132ae480e284a6c7d95decb
https://doi.org/10.1109/tns.2006.884789
https://doi.org/10.1109/tns.2006.884789
Autor:
Ronald D. Schrimpf, Patrick Fleming, J. A. Pellish, Robert A. Weller, A.D. Tipton, Marcus H. Mendenhall, Xiaowei Zhu, Robert A. Reed, Haixiao Weng
Publikováno v:
IEEE Transactions on Device and Materials Reliability.
Neutron interactions with terrestrial systems produce soft errors, increasing the failure-in-time (FIT) rate of advanced CMOS circuits. These neutron-induced errors are a critical reliability problem facing advanced technologies. This paper reports t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d94dbf845b169ef4347fc46c0c2b1be
https://doi.org/10.1109/tdmr.2008.925627
https://doi.org/10.1109/tdmr.2008.925627
Autor:
Paul W. Marshall, Vincent Pouget, Jonathan A. Pellish, Joseph S. Melinger, Robert A. Weller, Dale McMorrow, Guofu Niu, Robert A. Reed, John D. Cressler, R.M. Diestelhorst, A.D. Tipton, N. D. Pate, John A. Kozub, S.D. Phillips, Phillip P. Jenkins, Marcus H. Mendenhall, Akil K. Sutton, Ronald D. Schrimpf
Device-level current transients are induced by injecting carriers using two-photon absorption from a subbandgap pulsed laser and recorded using wideband transmission and measurement equipment. These transients exhibit three distinct temporal trends t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d7ca8ae565d2c24b4ed30351e7ccc40
https://hal.archives-ouvertes.fr/hal-00397926
https://hal.archives-ouvertes.fr/hal-00397926
Autor:
Robert A. Weller, Robert A. Reed, Lloyd W. Massengill, Ronald D. Schrimpf, A.D. Tipton, Marcus H. Mendenhall, Jonathan A. Pellish, P.R. Fleming
Publikováno v:
2007 IEEE International Conference on Integrated Circuit Design and Technology.
Neutron-induced multiple-bit upsets (MBU) in a 90 nm CMOS SRAM are examined using Monte-Carlo simulations. While the single-bit upset (SBU) cross section is nearly independent of angle, the probability of MBU increases for neutrons incident at grazin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::689c21932f17ca87ced76cc54b95eeeb
https://doi.org/10.1109/icicdt.2007.4299575
https://doi.org/10.1109/icicdt.2007.4299575
Autor:
A.D. Tipton, J.D. Wilkinson, Jonathan A. Pellish, Mark Porter, Robert A. Weller, Kevin M. Warren, Guofu Niu, Brian D. Sierawski, John D. Cressler, Robert A. Reed, Paul W. Marshall, Ronald D. Schrimpf, Gyorgy Vizkelethy
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::976634ed61e7cba265f357e6aecc223b
https://doi.org/10.1016/j.nimb.2007.04.152
https://doi.org/10.1016/j.nimb.2007.04.152
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