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Autor:
A.D. Strieker, Natalie B. Feilchenfeld, Benjamin T. Voegeli, K. Watson, J. Dunn, J. Rascoe, K. Newton, Peter B. Gray, S. St Onge, Nicholas Theodore Schmidt, B.A. Rainey
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..
An isolated vertical PNP BJT with f/sub T/ and f/sub MAX/ of 20GHz available as a modular component in a 0.18/spl mu/m SiGe BiCMOS technology is described. The VPNP device is fabricated using a low complexity integration scheme and is optimized to co