Zobrazeno 1 - 10
of 425
pro vyhledávání: '"A.C. Bryce"'
Autor:
Lianping Hou, M. Haji, John H. Marsh, Jehan Akbar, A.C. Bryce, Anthony Kelly, Michael J. Strain
Publikováno v:
IEEE Photonics Technology Letters. 25:253-256
We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 μm. These devices are based on an optimized low-optical-confinement AlGaInAs/InP epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbc3dd4237a1c82f6d8962a17ae47957
https://doi.org/10.1109/lpt.2012.2231858
https://doi.org/10.1109/lpt.2012.2231858
Publikováno v:
IEEE Journal of Quantum Electronics. 48:995-1003
We report on the detailed characterization of ultrashort pulses emitted from a 1.5- AlGaInAs/InP semiconductor passively mode-locked laser, operating at a repetition frequency of 35 GHz. Both the temporal and phase profiles of the pulses are retrieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b7b34bbbea835fdf916345d907bcdda
https://doi.org/10.1109/jqe.2012.2196849
https://doi.org/10.1109/jqe.2012.2196849
Publikováno v:
IEEE Journal of Quantum Electronics. 48:137-143
The monolithic integration of four 1.50-μm range AlGaInAs/InP distributed feed-back lasers with a 4 × 1 multimode-interference optical combiner, a curved semiconductor optical amplifier and an electroabsorption modulator using relatively simple tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e3a947f2b79e30b56c9d2aee6f27c4a
https://doi.org/10.1109/jqe.2011.2174455
https://doi.org/10.1109/jqe.2011.2174455
Autor:
Salvador Balle, Marc Sorel, Charles N. Ironside, Lianping Hou, Gabor Mezosi, Julien Javaloyes, A.C. Bryce, P. Stolarz
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
IEEE Photonics Journal, Vol 3, Iss 6, Pp 1067-1082 (2011)
instname
IEEE Photonics Journal, Vol 3, Iss 6, Pp 1067-1082 (2011)
In this paper, we present an experimental and theoretical study of passive mode-locking in semiconductor Fabry-Pérot, quantum-well, lasers operating at around 1550 nm and producing picosecond pulses at a repetition frequency of 40 GHz. The different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed338dcd8920d9869f5173f7705173aa
https://doi.org/10.1109/jphot.2011.2172403
https://doi.org/10.1109/jphot.2011.2172403
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:882-890
Inductively coupled plasma dry etching for the fabrication of fine-pitch patterns in a wide range of InP-based materials has been developed. The effect of plasma chemistry (the N2 content in the total Cl2/Ar/N2 gas mixture) on the degree of undercut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bf9c60d9143040c869071492896f6a8
https://doi.org/10.1116/1.3466811
https://doi.org/10.1116/1.3466811
Autor:
E. Ekevall, E. Spencer, B.P. Stimpson, J. Magill, Gordon Hayward, E.L. Hayward, A.C. Bryce, G. MacBride
Publikováno v:
IEEE Transactions on Education. 53:120-127
This paper describes the design, implementation, and evaluation of an educational program. Engineering the Future (EtF) sought to promote a permanent, informed awareness within the school community of high-level engineering by embedding key aspects o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a4eee33bf13105593e4d3ea2640f76b
https://doi.org/10.1109/te.2009.2025368
https://doi.org/10.1109/te.2009.2025368
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 13:1209-1214
In this paper, we report on a laser diode design that can be passively mode locked up to heat sink temperature of 75degC. The dependence of mode-locked frequency and the dependence of the tuning range of the mode-locked laser diode, on operating temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d61663343a19e725cf7602b34569dc79
https://doi.org/10.1109/jstqe.2007.905333
https://doi.org/10.1109/jstqe.2007.905333
Publikováno v:
physica status solidi c. 3:399-402
The research presented in this thesis describes the realisation of single-mode extended cavity GaInNAs/GaAs lasers. The GaInNAs/GaAs material system has gained much attention recently, and has been cited as a possible replacement to the InGaAsP/InP m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e08233e73a47bfc11cdc79a5ac651bbd
https://doi.org/10.1002/pssc.200564149
https://doi.org/10.1002/pssc.200564149
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2006, 288, pp.53. ⟨10.1016/j.jcrysgro.2005.12.048⟩
Journal of Crystal Growth, Elsevier, 2006, 288, pp.53. ⟨10.1016/j.jcrysgro.2005.12.048⟩
International audience; Photoluminescence (PL) and Raman spectroscopy were devised to study bandgap gratings fabricated in a waveguide with a core consisting of GaAs/AlAs short superlattice (SSL) structure using quantum well intermixing (QWI). The sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::358dc61fd100f73b618c9c424af0d7d9
https://doi.org/10.1016/j.jcrysgro.2005.12.048
https://doi.org/10.1016/j.jcrysgro.2005.12.048
Autor:
Janne Konttinen, Nicolas Laurand, T. Jouhti, Stephane Calvez, Martin D. Dawson, M. Pessa, A.C. Bryce
Publikováno v:
IEEE Journal of Quantum Electronics. 41:642-649
This paper reports on theoretical and experimental investigations of the influence of the number of GaInNAs quantum wells (QWs) on performance of 1.3-/spl mu/m vertical-cavity semiconductor optical amplifiers (VCSOAs). Full characterization is carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e014692d367bd5096ff3dbc8255e974e
https://doi.org/10.1109/jqe.2005.844176
https://doi.org/10.1109/jqe.2005.844176