Zobrazeno 1 - 10
of 63
pro vyhledávání: '"A.B. Lostetter"'
Autor:
Marcelo Schupbach, Caleb Paul Gutshall, A.B. Lostetter, Homer Alan Mantooth, I. Escorcia-Carranza, Khoa Minh Phan, Bradley A. Reese, Javier Valle-Mayorga
Publikováno v:
IEEE Transactions on Power Electronics. 27:4417-4424
Silicon Carbide (SiC) power semiconductors have shown the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities make SiC an attractiv
Autor:
W. Cilio, B. Passmore, Ty McNutt, Edgar Cilio, Jack Bourne, A.B. Lostetter, J. Hornberger, B. Reese, B. McPherson, M. Schupbach, Robert Shaw
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2012:000402-000406
A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to h
Autor:
P. Doyle, Jared Hornberger, H. Procell, R. Shaw, Roberto Schupbach, B. McPherson, A.B. Lostetter
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2012:000345-000353
The goal of this study is to investigate packaging techniques for extreme environment (i.e., −50 °C to 250 °C) power electronics. Areas of interest include substrate materials and baseplate/heat spreader materials. Multiple substrate technologies
Publikováno v:
International Symposium on Microelectronics. 2012:001105-001115
The packaging design and development of an on-board bi-directional charger for the battery system of the next generation Toyota Prius plug-in hybrid electric vehicle (PHEV) will be presented in this paper. The charger implements a multichip power mod
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2010:000283-000288
This paper discusses the development of a high temperature (i.e., 230 °C ambient) 100V–300V/15V 20W isolated power supply. The power supply is implemented using Silicon-Carbide (SiC) power switches, high-temperature silicon on insulator (HTSOI) co
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Autor:
Jared Hornberger, B. McPherson, K. Okumura, R. Shaw, Juan Carlos Balda, Marcelo Schupbach, Takukazu Otsuka, Brian Rowden, M. Miura, Bradley A. Reese, Alan Mantooth, A.B. Lostetter
Publikováno v:
2009 IEEE Vehicle Power and Propulsion Conference.
This paper presents the challenges and results of fabricating a high temperature silicon carbide based integrated power module. The gate driver for the module was integrated into the power package and is rated for an ambient temperature of 250 °C. T
Publikováno v:
2008 34th Annual Conference of IEEE Industrial Electronics.
High reliability power electronic systems intended for space applications present unique design challenges. Size, cost, and fault tolerance are key forces driving space based designs. A power system architecture capable of addressing these factors is
Autor:
A.B. Lostetter, Roberto Schupbach, Homer Alan Mantooth, E. Johnson, Simon S. Ang, Osama Saadeh, Juan Carlos Balda
Publikováno v:
2008 IEEE Power and Energy Society General Meeting - Conversion and Delivery of Electrical Energy in the 21st Century.
As utilities face increasing fault currents in their systems as a result of increasing demand and/or deployment of new technologies, fault current limiters promise a solution that will mitigate the need for replacing existing breakers as well as bein
Publikováno v:
2008 IEEE Aerospace Conference.
Spacecraft routinely experience extreme environmental conditions, including cryogenic (as low as -230degC) and elevated temperatures (as high as +130degC). Presently, the temperature of the spacecraft electronics is regulated to its safe operating te