Zobrazeno 1 - 10
of 27
pro vyhledávání: '"A.B. Icel"'
Autor:
Jung-Suk Goo, N. Pimparkar, Wafa Arfaoui, Robert Tu, Germain Bossu, Steffen Lehmann, A.B. Icel, Pratik B. Vyas, M. Siddabathula
Publikováno v:
IRPS
Accurate prediction of device aging plays a vital role in the circuit design of advanced-node CMOS technologies. In particular, hot-carrier induced aging is so complicated that its modeling is often significantly simplified, with focus limited to dig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0665d7351a98a74e4d1f77c9a9abe577
https://doi.org/10.1109/irps46558.2021.9405197
https://doi.org/10.1109/irps46558.2021.9405197
Autor:
Sriram Balasubramanian, Karthik Chandrasekaran, C. Weintraub, Vivek Joshi, A.B. Icel, Mangesh Kushare, Vinayak Mahajan, Arunima Dasgupta, N. Pimparkar, Takashi Shimizu, Kun Qian, Juhi Bansal
Publikováno v:
ISQED
Ultra low power (ULP) applications use supply voltage (Vdd) scaling as an effective way of reducing power. However, as Vdd is scaled near the threshold voltage (Vt), increased variability limits the minimum Vdd and power that can be realized. This pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0add259e1889a774279a79c230e90b60
https://doi.org/10.1109/isqed.2016.7479210
https://doi.org/10.1109/isqed.2016.7479210
Publikováno v:
IEEE Electron Device Letters. 25:819-821
This letter demonstrates that the conventional two-element lumped model can provide valid capacitance-voltage (C-V ) characteristics for gate oxides with large tunneling current, if the gate length is reduced. The two-element models generally suffer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7d928636a11ec1c6093e504b3509159
https://doi.org/10.1109/led.2004.839209
https://doi.org/10.1109/led.2004.839209
Autor:
Judy Xilin An, Mario M. Pelella, S. Butler, S. Hale, A.B. Icel, L. Zamudio, R. Klein, Jung-Suk Goo, M.S.L. Lee
Publikováno v:
IEEE Electron Device Letters. 25:302-304
The switching-mode dependence of inductive noise on the power bus lines has been investigated. As the maximum operation frequency of the very large-scale integration is determined by the slowest response in the critical path, suppression of inductive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40f54f7c8d86cddd58df2b7f86430954
https://doi.org/10.1109/led.2004.826510
https://doi.org/10.1109/led.2004.826510
Publikováno v:
CICC
In this paper, we investigate the geometry dependence for the local variation of low-frequency noise in MOSFETs via the sum of lognormal random variables. A compact model has been developed and applied to the measured data with excellent match, and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30beb79c628c1273f07d0decc3cac171
https://doi.org/10.1109/cicc.2012.6330573
https://doi.org/10.1109/cicc.2012.6330573
Publikováno v:
2010 International Conference on Microelectronic Test Structures (ICMTS).
The difference in the number of contacts across different transistors and standard cells results in current variations across the channel. In this work, we present test structures to target this effect and characterize and quantify the impact on 45 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23a75fca8f144a5712e2eb063f6121fe
https://doi.org/10.1109/icmts.2010.5466822
https://doi.org/10.1109/icmts.2010.5466822
Autor:
Thorsten Knopp, James F. Buller, Hans vanMeer, Kalyana Kumar, Yuri Apanovich, John Faricelli, James C. Pattison, Bill Gardiol, Greg Constant, Joe Meier, Sean Hannon, Sushant Suryagandh, Kevin Carrejo, Darin Chan, Uwe Hahn, Akif Sultan, A.B. Icel, Rasit O. Topaloglu, Steve F. Hejl, David Wu, Kaveri Mathur, Victor F. Andrade, Larry A. Bair
Publikováno v:
ISQED
Stressors have been used since 90 nm technology to improve device performance to overcome the limitations of scaling. The stressors, including, - CPEN, TPEN, SMT, and e-SiGe to improve NMOS and PMOS drive current exhibit proximity dependence. In addi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::271703b2faeb4e35b5986a54968f212e
https://doi.org/10.1109/isqed.2009.4810335
https://doi.org/10.1109/isqed.2009.4810335
Autor:
Ciby Thuruthiyil, Vineet Wason, A.B. Icel, Niraj Subba, Jung-Suk Goo, Y. Apanovich, Qiang Chen, Awanish Pandey, Tran Ly
Publikováno v:
2008 IEEE International SOI Conference.
Accurate extraction of the SPICE model parameter is critical in the CMOS IC design. However, it faces difficult issues in state-of-the-art MOSFET technology. First, the gate CV parameter extraction is challenging due to small values and many extrinsi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6e11133c8123860704b1e4d7f825b0b
https://doi.org/10.1109/soi.2008.4656340
https://doi.org/10.1109/soi.2008.4656340
Autor:
S. Balasubramanian, Niraj Subba, Priyanka Chiney, Ciby Thuruthiyil, Vineet Wason, A.B. Icel, S. Krishnan, Qiang Chen, M. Gupta, Jung-Suk Goo
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
Critical currents (ICRIT) extracted from the N-curves of a 6-T SRAM bit cell have been shown in recent research to be important and effective figures of merit for the cell?s stability and write-ability. SPICE models of cell transistors, therefore, no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62a850cd41962f76cb3066f23414e5af
https://doi.org/10.1109/icsict.2008.4734560
https://doi.org/10.1109/icsict.2008.4734560
Autor:
M. Gupta, Jung-Suk Goo, Priyanka Chiney, Sushant Suryagandh, Qiang Chen, Zhi-Yuan Wu, Tran Ly, Niraj Subba, Martin Radwin, A.B. Icel, Ciby Thuruthiyil, Vineet Wason
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
Speculative SPICE models (also referred to as evaluation-level or guess models), which are extracted based on projected device electrical characteristics (called `targets?) rather than actual measurement data, are required to support concurrent IC de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f64c32c44dac1c02be927326ebe78e2
https://doi.org/10.1109/icsict.2008.4734534
https://doi.org/10.1109/icsict.2008.4734534