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Autor:
A.A.Mel’ nikova, N. L. Ivina, Zs. J. Horváth, M. L. Orlov, V. N. Neverov, N. A. Alyabina, L. K. Orlov
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 51:87-93
The low-temperature electrical and magnetotransport characteristics of partially relaxed Si/Si 1− x Ge x heterostructures with two-dimensional electron channel ( n e ≥10 12 cm −2 ) in an elastically strained silicon layer of nanometer thickness