Zobrazeno 1 - 10
of 35
pro vyhledávání: '"A.A. Wolfson"'
Publikováno v:
Arctic: Ecology and Economy. :77-85
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8127ff98b7c9eada90a9b70ee0d74a6
https://doi.org/10.25283/2223-4594-2020-2-77-85
https://doi.org/10.25283/2223-4594-2020-2-77-85
Autor:
E.N. Mokhov, A.A. Wolfson
This chapter reviews the results of growing bulk aluminum nitride (AlN) and gallium nitride (GaN) crystals on foreign substrates by the sublimation sandwich method. We analyzed the kinetics and the mechanism of sublimation and condensation of nitride
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f4073af1984e50e14e3eccfec6e260d
https://doi.org/10.1016/b978-0-08-102096-8.00012-4
https://doi.org/10.1016/b978-0-08-102096-8.00012-4
Autor:
S. S. Nagalyuk, A.A. Wolfson, D. P. Litvin, A. V. Vasiliev, I. Izmaylova, Yu. Makarov, O. Kazarova, Heikki Helava, E. N. Mokhov
Publikováno v:
physica status solidi c. 10:445-448
The features of 2” AlN bulk crystal growth by the sublimation sandwich method (SSM) on SiC seeds in a graphite-heated reactor are investigated. AlN growth conditions and crystal properties are compared with the results of SiC sublimation growth in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c34db0ce11e2cca693768cddb7273c48
https://doi.org/10.1002/pssc.201200638
https://doi.org/10.1002/pssc.201200638
Publikováno v:
Materials Science Forum. :107-110
The dependence of the layer growth rate on a gas (argon, nitrogen) pressure inside the reactor has been examined in order to analyze the conditions of growth of AlN thick layers and bulk crystals by the sublimation sandwich-method. It is shown that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9996e684b757c3c811a5beb25fa19537
https://doi.org/10.4028/www.scientific.net/msf.740-742.107
https://doi.org/10.4028/www.scientific.net/msf.740-742.107
Autor:
A.O. Avdeev, A.A. Wolfson, A.V. Vasiliev, S. S. Nagalyuk, E. N. Mokhov, D. P. Litvin, Yu. Makarov, Heikki Helava, M.G. Ramm
Publikováno v:
Materials Science Forum. :95-98
AlN bulk crystals were grown by the sublimation “sandwich method” on the SiC substrates. Two types of containers were used: (i) Ta container with a surface layer of TaC created by the special annealing in contact with carbon, (ii) TaC container c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10d5ef84f4862865f2da2af381f79749
https://doi.org/10.4028/www.scientific.net/msf.740-742.95
https://doi.org/10.4028/www.scientific.net/msf.740-742.95
Publikováno v:
Materials Science Forum. :81-84
Growth techniques of high quality AlN and GaN bulk crystals on SiC seeds by sublimation sandwich method are presented. GaN crystals were grown in the temperature range of 1100-1250 °C and with addition of ammonia (NH3) to prevent GaN decomposition.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c73575d10970e1ce1fce6790acf8b37
https://doi.org/10.4028/www.scientific.net/msf.740-742.81
https://doi.org/10.4028/www.scientific.net/msf.740-742.81
Autor:
T.Yu. Chemekova, Yu.N. Makarov, O.V. Avdeev, I. S. Barash, Alexandr Dmitrievich Roenkov, M.G. Ramm, E. N. Mokhov, A.S. Segal, Heikki Helava, A.A. Wolfson
Publikováno v:
Journal of Crystal Growth. 281:93-100
AlN single crystals of 0.5 in diameter and up to 10–12 mm long have been grown by sublimation/recondensation in pre-treated tantalum crucibles. Growth of 45 mm diameter and 4 mm long polycrystalline AlN boules has also been demonstrated. After high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9846b6e03f02550bb19c130380c7a72a
https://doi.org/10.1016/j.jcrysgro.2005.03.016
https://doi.org/10.1016/j.jcrysgro.2005.03.016
Autor:
Yu. A. Vodakov, Holger Juergensen, E. N. Mokhov, Pavel G. Baranov, S. Yu. Karpov, A. O. Ostroumov, A.A. Wolfson, D. V. Zimina, G. V. Saparin, M. S. Ramm, V V Ratnikov, Yu.N. Makarov, M.G. Ramm, Alexandr Dmitrievich Roenkov
Publikováno v:
Scopus-Elsevier
The current status of GaN crystal growth using the Sublimation Sandwich Technique is discussed in the paper. We use modeling to analyze gas dynamics in the reactor and the supply of the main gaseous species into the growth cell under growth condition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fce30d94b473a1b8fde6d5f58794532
https://doi.org/10.1557/s1092578300001228
https://doi.org/10.1557/s1092578300001228
Autor:
H. Jürgensen, A.A. Wolfson, Yu. A. Vodakov, M. S. Ramm, S. Yu. Karpov, Alexandr Dmitrievich Roenkov, A. G. Ostroumov, M.G. Ramm, E. N. Mokhov, Yu.N. Makarov
Publikováno v:
MRS Proceedings. 482
Thick epitaxial layers of GaN on SiC and sapphire are grown by using the sublimation sandwich method. It is shown that growth of good quality GaN crystals with the growth rates up to 0.5 mm/hour is possible using this technique. The grown layers have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c93d2a4f224d081b05af34a964dd07f0
https://doi.org/10.1557/proc-482-27
https://doi.org/10.1557/proc-482-27
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.