Zobrazeno 1 - 10
of 46
pro vyhledávání: '"A.A. Telegin"'
Publikováno v:
Kontrol'. Diagnostika. :53-56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b18e9e97fa36f63239269ded9f1a309
https://doi.org/10.14489/td.2016.07.pp.053-056
https://doi.org/10.14489/td.2016.07.pp.053-056
Autor:
A. A. Kudryashov, V. F. Dvoryankin, Yu. M. Dikaev, A. G. Petrov, A.A. Telegin, G. G. Dvoryankina
Publikováno v:
Russian Microelectronics. 44:241-243
The design of an X-ray linear detector based on single crystals Cd0.9Zn0.1Te has been described. The results of usage have been given.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecca2958f5dd1f5bc22527dbd4cb9ee0
https://doi.org/10.1134/s1063739715040034
https://doi.org/10.1134/s1063739715040034
Autor:
V. F. Dvoryankin, A. G. Petrov, M.G. Ermakov, A.A. Telegin, G. G. Dvoryankina, Yu. M. Dikaev, A. A. Kudryashov
Publikováno v:
Instruments and Experimental Techniques. 56:87-92
The results of investigations of the properties of a new photovoltaic X-ray detector are presented. The detector was manufactured on the basis of a GaAs (p+-n-n′-n+) epitaxial structure, which was grown using the vapor-phase epitaxy method. The det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::880d6959e6ab20f9c18cf520ac066f43
https://doi.org/10.1134/s0020441213010193
https://doi.org/10.1134/s0020441213010193
Autor:
A. G. Petrov, A.A. Telegin, V. F. Dvoryankin, Yu. M. Ivanov, G. G. Dvoryankina, A. A. Kudryashov
Publikováno v:
Technical Physics. 56:740-743
X-ray detectors made of Cd0.9Zn0.1Te single crystals are studied. Starting components (Cd, Zn, Te) are obtained by multistage volume distillation. Synthesized CdZnTe is finally purified by continuous vacuum sublimation. Detectors highly sensitive to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cf181085d146e9de28b4d708a3cc6fc
https://doi.org/10.1134/s1063784211050100
https://doi.org/10.1134/s1063784211050100
Autor:
A.A. Telegin, G. G. Dvoryankina, V. F. Dvoryankin, A. G. Petrov, Yu. M. Dikaev, A. A. Kudryashov, M.G. Ermakov, O.N. Ermakova
Publikováno v:
Technical Physics. 52:1369-1372
The characteristics of a photovoltaic X-ray detector based on the GaAs p +-n-n′-n + epitaxial structure grown using gas-phase epitaxy are studied. Typical current-voltage and capacitance-voltage characteristics of the epitaxial structures are analy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b79101405a4b2795cf6e887fc8f42b1
https://doi.org/10.1134/s1063784207100209
https://doi.org/10.1134/s1063784207100209
Autor:
V. F. Dvoryankin, A.I. Krikunov, R.A. Achmadullin, Yu. M. Dikaev, A.G. Holodenko, V.B. Chmil, Vladimir V. Artemov, O.N. Ermakova, A.P. Vorobiev, G. G. Dvoryankina, A.A. Telegin, A. A. Kudryashov, M.G. Ermakov, A. G. Petrov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 554:314-319
A new type of the photovoltaic X-ray detector based on epitaxial p+-n-n′-n+ GaAs structures is proposed, which provides for a high efficiency of charge carrier collection in a nonbiased operation regime at room temperature. The GaAs structures were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9dd00df06ca98838a9036c6fbe293ed
https://doi.org/10.1016/j.nima.2005.07.073
https://doi.org/10.1016/j.nima.2005.07.073
Autor:
G. G. Dvoryankina, R.A. Achmadullin, A.I. Krikunov, A. A. Kudryashov, V. F. Dvoryankin, A.A. Telegin, Yu. M. Dikaev, A. G. Petrov, T.M. Panova
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 531:89-91
The multichannel bilinear X-ray detector based on epitaxial GaAs structures is developed to obtain a digital X-ray image. Each detector operates in photovoltaic mode without reverse bias that enables almost complete elimination of detector noise aris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2f52429613efd6a472fd4659ca2f8a1
https://doi.org/10.1016/j.nima.2004.05.098
https://doi.org/10.1016/j.nima.2004.05.098
Publikováno v:
Russian Microelectronics. 33:206-208
A 1D x-ray detector array of pitch 108 μm is designed, fabricated, and tested. The array is based on the p+–n–n′–n+ structure made in epitaxial GaAs technology. Guard rings are incorporated to reduce detector cross coupling. It is announced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75d3e931df1e244d0fd0f7dc20439607
https://doi.org/10.1023/b:rumi.0000033825.37764.9d
https://doi.org/10.1023/b:rumi.0000033825.37764.9d
Autor:
A. A. Kudryashov, A. G. Petrov, Yu. M. Dikaev, M.G. Ermakov, G. G. Dvoryankina, A.A. Telegin, V. F. Dvoryankin
Publikováno v:
Mammography-Recent Advances
The short coming of the conventional film-screen systems arises from limited dynamic range due to the film latitude and Swank noise from the screen and film granularity that limits the system rather than quantum fluctuations. A thin intensifying scre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69cbf016c41780d504a754b5d3ad55a9
https://doi.org/10.5772/32431
https://doi.org/10.5772/32431
Autor:
A.I. Krikunov, A. A. Kudryashov, G. G. Dvoryankina, R.A. Achmadullin, Yu. M. Dikaev, A.A. Telegin, O.N. Ermakova, V. F. Dvoryankin, M.G. Ermakov, A. G. Petrov
Publikováno v:
Technical Physics Letters. 28:15-16
A new type of the photovoltaic X-ray detector based on epitaxial p +-n-n′-n + GaAs structures is proposed, which provides for a high efficiency of charge carrier collection in a nonbiased operation regime at room temperature. The GaAs structures we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8136550b3f726934e28f76631a28479
https://doi.org/10.1134/1.1448629
https://doi.org/10.1134/1.1448629