Zobrazeno 1 - 10
of 77
pro vyhledávání: '"A.A. Ketterson"'
Publikováno v:
IEEE Transactions on Electron Devices. 44:2136-2142
The DC and microwave characteristics of two sets of AlGaAs/InGaAs PHEMTs having a gate length of 0.2 /spl mu/m are compared. The first set is composed of devices fabricated using a trilayer electron beam resist process for T-gate recess and metalliza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43ac253202f9ca61b3a93a9299c51235
https://doi.org/10.1109/16.644626
https://doi.org/10.1109/16.644626
Publikováno v:
Solid-State Electronics. 38:517-524
GaAs MESFETs with gate lengths from 55 to 150 nm have been fabricated and characterized. By using selective etching for the gate recess, the channel thickness as well as the aspect ratio of the devices of each gate length are known accurately. A cuto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb82a3fe9bf806d2a652b607ab8355f5
https://doi.org/10.1016/0038-1101(94)00097-y
https://doi.org/10.1016/0038-1101(94)00097-y
Publikováno v:
Journal of Electronic Materials. 22:375-381
The effects of selective reactive ion etching (SRIE) using SiCl4/SiF4 plasma on delta-doped GaAs/Al0.3Ga0.7As modulation-doped field-effect transistor (MODFET) structures and devices have been investigated. The results are compared with those of corr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::693f5146c8599ca05fd91ec5275c5ee9
https://doi.org/10.1007/bf02661665
https://doi.org/10.1007/bf02661665
Autor:
K. Nummila, Kangguo Cheng, Ilesanmi Adesida, M. Tong, J.-W. Seo, A.A. Ketterson, J.J. Morikuni, Sung-Mo Kang
Publikováno v:
IEEE Transactions on Electron Devices. 40:1406-1416
The design, fabrication, and characterization of a 0.85- mu m sensitive photoreceiver is described. The monolithically integrated optoelectronic receiver is based on pseudomorphic InGaAs on GaAs modulation-doped field-effect transistors (MODFETs) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d600639d1bc4595b4f28bd94f3ba7e9
https://doi.org/10.1109/16.223699
https://doi.org/10.1109/16.223699
Publikováno v:
Journal of Electronic Materials. 21:9-15
The etching characteristics of AlxGa1-xAs in citric acid/H2O2 solutions and SiCl4/SiF4 plasmas have been studied. Using a 4:1 solution of citric acid/H2O2 at 20° C, selectivities of 155, 260, and 1450 have been obtained for GaAs on AlxGa1-xAs withx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a33c4e7f6d46163bc0d7a1ce70074351
https://doi.org/10.1007/bf02670914
https://doi.org/10.1007/bf02670914
Publikováno v:
Cryogenics. 30:1134-1139
This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off freque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::857fdc2fa34c4427333c4b492d10d273
https://doi.org/10.1016/0011-2275(90)90221-w
https://doi.org/10.1016/0011-2275(90)90221-w
Autor:
James Kolodzey, Ilesanmi Adesida, S. Agarwala, J. Laskar, A.A. Ketterson, T. L. Brock, Hadis Morkoç
Publikováno v:
Microelectronic Engineering. 11:69-72
0.2 μm T-gate MODFETs have been fabricated and characterized in a planar-doped, lattice-matched InAlAs/InGaAs/InP heterostructure. Extrinsic dc tranconductance as high as 704 mS/mm with very good pinch-off characteristics have been obtained in these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c509d0d3e18507522604a0bea44b30
https://doi.org/10.1016/0167-9317(90)90075-5
https://doi.org/10.1016/0167-9317(90)90075-5
Autor:
S. Boor, K. C. Hsieh, A.A. Ketterson, Alfred Y. Cho, T. L. Brock, Seref Kalem, J. Laskar, S. Caracci, James Kolodzey, D. Sivco, Ilesanmi Adesida
Publikováno v:
Journal of Electronic Materials. 19:249-252
We report on the electrical and microstructural properties of InP/GaxIn1-xAs/Al0.48In0.52As modulation doped layers having compositionally graded active channels with different channel thicknesses. The layers were grown by solid source molecular beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8603610dc3ae205c04b16d084927edc4
https://doi.org/10.1007/bf02733814
https://doi.org/10.1007/bf02733814
Autor:
A.A. Ketterson, J.-W. Seo, M. Tong, L. Adesida, D. Ballegeer, K. Nummila, Sung-Mo Kang, Kangguo Cheng
Publikováno v:
Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c839c0c6a1f715324c431847457754f7
https://doi.org/10.1109/leosst.1992.697452
https://doi.org/10.1109/leosst.1992.697452
Publikováno v:
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
The authors have fabricated and characterized MODFETs on OMVPE (organometallic vapor-phase epitaxy)-grown InAlAs/InGaAs/InP heterostructures. Excellent DC and RF characteristics were obtained. Extrinsic DC transconductance as high as 1020 mS/mm and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::418f140de442465197334e3ebe294369
https://doi.org/10.1109/iciprm.1992.235678
https://doi.org/10.1109/iciprm.1992.235678