Zobrazeno 1 - 10
of 51
pro vyhledávání: '"A.A. Hakhoumian"'
Publikováno v:
Физические основы приборостроения. 5:20-27
Autor:
A. S. Nikoghosyan, G. D. Hovhannisyan, E.M. Laziev, A.A. Hakhoumian, R.M. Martirosyan, D. L. Hovhannisyan
Publikováno v:
Journal of Modern Optics. 57:1075-1086
We present the results of a numerical study of the generation process of difference frequency radiation (DFR) arising via the interaction of mutually orthogonal linearly- polarized few-cycle laser pulses propagating in a quasi-phase-matching (QPM) Ga
Autor:
A. S. Nikoghosyan, D. L. Hovhannisyan, R.M. Martirosyan, G. D. Hovhannisyan, E.M. Laziev, A.A. Hakhoumian
Publikováno v:
Journal of Modern Optics. 57:1228-1242
We present the results of theoretical studies of the generation process of difference frequency radiation arising via interaction of mutually orthogonal linearly polarized few-cycle laser pulses propagating in an isotropic nonlinear medium. Numerical
Publikováno v:
Journal of Contemporary Physics (Armenian Academy of Sciences). 45:17-24
We study the influence of spatial boundedness of a femtosecond laser pulse (FLP) on the efficiency of generation of difference frequency radiation (DFR) in a GaAs crystal with a periodic domain structure. It is shown that at propagation of DFR a spec
Autor:
A.A. Hakhoumian, T. T. Hovhannisyan, Hovik V. Baghdasaryan, Marian Marciniak, Tamara M. Knyazyan
Publikováno v:
2015 17th International Conference on Transparent Optical Networks (ICTON).
Electromagnetic modelling of THz wave emission from GaP layer imbedded in a Fabry-Perot micro-resonator formed by two DBR mirrors is performed. The frequency-domain modelling is carried out by the method of single expression. The modelling permits to
Autor:
T. V. Zakaryan, Gennady A. Ovsyannikov, A.A. Hakhoumian, Karen Y. Constantinian, Y.V. Kislinski, Igor V. Borisenko, N. G. Pogosyan
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 19:669-673
Thin film metal oxide superconducting bicrystal junctions on sapphire substrates with I c R N products up to 2.5 mV at 4.2 K for width 4 μm and normal-state junction resistance 10–60 Ω were fabricated and characterized at dc and THz frequency. Th
Autor:
Niels Falsig Pedersen, Gennady A. Ovsyannikov, Jesper Mygind, Pavel A. Yagoubov, Igor V. Borisenko, Nubar G Pogosyan, A.A. Hakhoumian, Karen Y. Constantinian
Publikováno v:
Superconductor Science and Technology. 14:1035-1039
The intensities of the noise in a bicrystal high-TC (HTS) Josephson junction have been precision-measured at 1–2 GHz frequency band at bias voltages up to 50 mV at T = 4.2 K. At large bias voltages, V > 30 mV, the dependence of current noise densit
Publikováno v:
SPIE Proceedings.
We present the results of numerical study of the generation process of difference frequency radiation (DFR) arising via interaction of mutually orthogonal linearly- polarized a few-cycle laser pulses propagating in a quasiphase- matching (QPM) GaAs c
Autor:
G. D. Hovhannisyan, D. L. Hovhannisyan, A.A. Hakhoumian, E. M. Laziev, R.M. Martirosyan, A. S. Nikoghosyan
Publikováno v:
35th International Conference on Infrared, Millimeter, and Terahertz Waves.
The results of the THz radiation generation via interaction of 30 fs fiber-optical lasers pulses with the wavelengths of 1.98 and 1.55 μm in GaAs are presented. Numerical time-integration by the finite-difference method of nonlinear Maxwell-equation
Publikováno v:
Journal of Applied Physics. 117:163914
A device for the imaging of magnetic fields and domain structures based on the Faraday effect has been developed using garnet thin films prepared by the metal-organic decomposition method as indicators. The sensitivity was improved by using high conc