Zobrazeno 1 - 10
of 79
pro vyhledávání: '"A.A. Gavrikov"'
Comparative Analysis of Methods for Measuring Thermal Resistance of Gallium Nitride HEMT-Transistors
Publikováno v:
Proceedings of Universities. ELECTRONICS. 25:219-233
Publikováno v:
IEEE Journal of Photovoltaics. 9:775-779
This paper describes a modulation method of measuring the thermal impedance of solar modules. The measurements are taken by varying heating power harmonically and measuring a variable component of the junction temperature, which changes in response t
Publikováno v:
Journal of Radio Electronics.
The results of power solar batteries' thermal resistance measurements are described. A distinctive feature of such batteries is the high heat capacity of the semiconductor material, as well as the high total electrical capacity of p-n-junctions. This
Publikováno v:
Journal of Radio Electronics. 2020
The paper describes the results of investigation of thermophysical processes in power modules. Measuring the thermal field caused by dies heating due to flow of heating current shows uniform temperature distribution in the area of dies mount. This in
Publikováno v:
Journal of Radio Electronics. 2020
Autor:
Vitaliy Ivanovich Smirnov, Alexandr Alexandrovich Kulikov, A.A. Gavrikov, Viacheslav Andreevich Sergeev
Publikováno v:
2020 Moscow Workshop on Electronic and Networking Technologies (MWENT).
The paper describes the studies of current localization processes while measuring the thermal resistance of a solar cells. The study object was the monocrystalline silicon solar element, 52 × 52 mm2 size, placed on the heat sink using thermal grease
Publikováno v:
IEEE Transactions on Power Electronics. 33:6211-6216
Modulation method and the device for thermal impedance measuring of power mosfet s and IGBT transistors, and measurement results are described. The measurements were performed by generic modulation method that implies heating a device under test by p
Publikováno v:
Microelectronics Reliability. 80:205-212
The paper describes the modulation method of measuring the thermal impedance of semiconductor devices as well as its implementation. In contrast to the standard method (JESD51-1 standard) which requires heating the device under test by the stepped po
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Akademický článek
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