Zobrazeno 1 - 10
of 78
pro vyhledávání: '"A.A. Dzhurakhalov"'
Publikováno v:
«Узбекский физический журнал». 20:265-274
In the present work the peculiarities of ion implantation and colliding particles mass ratio influence on the ranges, energy loss and profiles of distribution for 1−5 keV P+ ions channelling in Si(110) and SiC(110) at normal incidence, and 1 keV Be
Publikováno v:
Plant Physiology and Function ISBN: 9781461476115
Plant Physiology and Function
Plant Physiology and Function
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4996417190babedeaa874333eb77d940
https://doi.org/10.1007/978-1-4614-7611-5_4-1
https://doi.org/10.1007/978-1-4614-7611-5_4-1
Autor:
F. F. Umarov, A.A. Dzhurakhalov
Publikováno v:
Surface and Interface Analysis. 45:83-86
The peculiarities of sputtering processes at low-energy Ne grazing ion bombardment of Si(001), SiC(001) and Cu3Au(001) surfaces and their possible application for the surface modification have been studied by computer simulation. Sputtering yields in
Publikováno v:
Technical physics
Processes of defect formation as a result of scattering of carbon atoms with energies of 10 and 100 eV by graphene at different angles of incidence are studied by the molecular dynamics method. The possibility of formation of a carbon adatom and vaca
Publikováno v:
Journal of physics : conference series
The recently developed simulation framework VirtualLeaf uses Metropolis Monte Carlo dynamics for studying plant tissue morphogenesis. Minimizing the energy of the tissue is done by an energy evaluation-only method. We developed a more robust criterio
Autor:
A.M. Rasulov, A.A. Dzhurakhalov
Publikováno v:
Computational Materials Science. 33:148-152
A comparative investigation of 1–5 keV P+ ions channeling in thin (ΔZ = 500 A) and thick Si(1 1 0), SiC(1 1 0), GaP(1 1 0) and AsGa(1 1 0) crystals has been carried out by computer simulation in the binary collision approximation. The ion ranges,
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 230:560-564
The ion scattering and sputtering processes at low energy grazing N+ and Ne+ ion bombardment of clean and oxygen covered Ag(1 1 0) surface have been investigated by computer simulation in the binary collision approximation. The spatial, angular and e
Investigation of sputtering and oxygen desorption processes by binary collision approximation method
Publikováno v:
Computational Materials Science. 33:250-255
The peculiarities of the formation of the primary knock-on recoil (PKR) atoms and oxygen desorption processes under conditions of low-energy grazing ion bombardment of clean and O2 covered Ag(1 1 0) surface have been investigated by computer simulati
Publikováno v:
Radiation Effects and Defects in Solids. 159:293-299
The energy, angular distributions and trajectories of particles scattered on surfaces of Ni(100) and Cu(100), with both ideal and damaged, and semi-infinite and isolated atomic steps, have been calculated. It has been shown that from the correlation