An Overview of the BlueGene/L Supercomputer

Autor: N.R. Adiga, G. Almasi, G.S. Almasi, Y. Aridor, R. Barik, D. Beece, R. Bellofatto, G. Bhanot, R. Bickford, M. Blumrich, A.A. Bright, J. Brunheroto, C. Cascaval, J. Castanos, W. Chan, L. Ceze, P. Coteus, S. Chatterjee, D. Chen, G. Chiu, T.M. Cipolla, P. Crumley, K.M. Desai, A. Deutsch, T. Domany, M.B. Dombrowa, W. Donath, M. Eleftheriou, C. Erway, J. Esch, B. Fitch, J. Gagliano, A. Gara, R. Garg, R. Germain, M.E. Giampapa, B. Gopalsamy, J. Gunnels, M. Gupta, F. Gustavson, S. Hall, R.A. Haring, D. Heidel, P. Heidelberger, L.M. Herger, D. Hoenicke, R.D. Jackson, T. Jamal-Eddine, G.V. Kopcsay, E. Krevat, M.P. Kurhekar, A.P. Lanzetta, D. Lieber, L.K. Liu, M. Lu, M. Mendell, A. Misra, Y. Moatti, L. Mok, J.E. Moreira, B.J. Nathanson, M. Newton, M. Ohmacht, A. Oliner, V. Pandit, R.B. Pudota, R. Rand, R. Regan, B. Rubin, A. Ruehli, S. Rus, R.K. Sahoo, A. Sanomiya, E. Schenfeld, M. Sharma, E. Shmueli, S. Singh, P. Song, V. Srinivasan, B.D. Steinmacher-Burow, K. Strauss, C. Surovic, R. Swetz, T. Takken, R.B. Tremaine, M. Tsao, A.R. Umamaheshwaran, P. Verma, P. Vranas, T.J.C. Ward, M. Wazlowski, W. Barrett, C. Engel, B. Drehmel, B. Hilgart, D. Hill, F. Kasemkhani, D. Krolak, C.T. Li, T. Liebsch, J. Marcella, A. Muff, A. Okomo, M. Rouse, A. Schram, M. Tubbs, G. Ulsh, C. Wait, J. Wittrup, M. Bae, K. Dockser, L. Kissel, M.K. Seager, J.S. Vetter, K. Yates

Publikováno v: ACM/IEEE SC 2002 Conference (SC'02).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f1c2d1cda5719e9be3a6036355372c6
https://doi.org/10.1109/sc.2002.10017

A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices

Autor: V. P. Kesan, Paul M. Solomon, A.A. Bright, J. L. Freeouf, Thao N. Nguyen, Subramanian S. Iyer, A. C. Warren

Publikováno v: IEEE Electron Device Letters. 12:246-248

The authors present a high-quality dielectric system for use with Si/sub 1-x/Ge/sub x/ alloys. The system employs plasma-enhanced chemical vapor deposited (PECVD) SiO/sub 2/ on a thin (6-8-nm) layer of pure silicon grown epitaxially on the Si/sub 1-x

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a53ac6de5319ec8ae8775cebfd5f9b1
https://doi.org/10.1109/55.79571

SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a 'No Dt' process

Autor: E. de Fresart, K.K. Chan, Emmanuel F. Crabbe, J.M.C. Stork, M. Dimeo, David L. Harame, R.C. McIntosh, A.A. Bright, Gary L. Patton, Bernard S. Meyerson, A.C. Megdanis, C.L. Stanis, E. Petrillo, G. J. Scilla, M.P. Manny

Publikováno v: Digest of Technical Papers.1990 Symposium on VLSI Technology.

Experimental results are presented on the use of N-type ultrahigh-vacuum/chemical vapor deposition (UHV/CVD) low-temperature epitaxy (LTE) to deposit thin (45 nm), heavily doped (1t1019 cm-3) SiGe films to form the base of PNP transistors. To take fu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::84e5cdb1a604c30b5ce0c588b0a2b55d
https://doi.org/10.1109/vlsit.1990.111001

A Josephson technology system level experiment

Autor: J.W. Stasiak, J. Sokolowski, M. Natan, S. P. Klepner, R.W. Guernsey, C.J. Anderson, S. Puroshothaman, Run-Han Wang, C.T. Wu, D. J. Herrell, H. C. Jones, J. H. Greiner, J. Matisoo, P. Geldermans, Paul A. Moskowitz, D.P. Walkman, T.R. Gheewala, K. R. Grebe, M. Klein, B. J. C. van der Hoeven, S. Bermon, A. J. Warnecke, T. Yogi, Harry R. Bickford, P. C. Arnett, Mark B. Ketchen, A.A. Bright

Publikováno v: IEEE Electron Device Letters. 2:262-265

This letter describes the first system level test vehicle in Josephson technology. The experiment consists of four circuit chips assembled on two cards in a high density, 3-dimensional, card-on-board package. A data path, which is representative of a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1357bd409d138f590966180a5f77b52f
https://doi.org/10.1109/edl.1981.25426

Temperature and Magnetic Field Dependence of the Subharmonic Structure in Pb-Pb Superconducting Tunneling

Autor: J.R. Merrill, A.A. Bright

Publikováno v: Physical Review. 184:446-450

Peaks occur in the $I\ensuremath{-}V$ characteristics of lead-lead-oxide-lead superconducting tunnel junctions at submultiples $\frac{2\ensuremath{\Delta}}{n}$ of the full energy gap $2\ensuremath{\Delta}$. This "subharmonic structure" has been studi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b58821ae339a5ca0944d43d32538339
https://doi.org/10.1103/physrev.184.446