Zobrazeno 1 - 10 of 152 pro vyhledávání: '"A.-M. Van Bavel"'
1
A Field Test of Recursive Calculation of Crop Evapotranspiration
Autor: C. H. M. van Bavel, Steven R. Evett, Robert J. Lascano
Publikováno v: Transactions of the ASABE. 53:1117-1126
Unlike the Penman and Penman-Monteith methods, recursive calculation of crop evapotranspiration (ET) is a combination method that makes no assumption regarding the temperature and saturation humidity at the evaporating surface. Our objective was to e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a8dce29d69c0b0406f911e0c3ce6931d
https://doi.org/10.13031/2013.32601
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2
Explicit and Recursive Calculation of Potential and Actual Evapotranspiration
Autor: Cornelius H. M. van Bavel, Robert J. Lascano
Publikováno v: Agronomy Journal. 99:585-590
The explicit combination method (ECM; Penman, 1948) to calculate potential evapotranspiration (ETp) is a physically based model using standard climatological data. It is based on an assumption regarding the temperature and humidity at the evaporating
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c4d568ba2e8816ccecc08be0c8ab6b8a
https://doi.org/10.2134/agronj2006.0159
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6
Gas phase reactions of HNO3 with Cl−, Cl−H2O, and Cl−HCl, of Cl2 with Cl−H2O and Cl−HCl, and of HCl with Cl−H2O
Autor: E. Arijs, Niels Schoon, A.-M. Van Bavel, Crist Amelynck
Publikováno v: International Journal of Mass Spectrometry. 181:113-121
This paper reports on the gas phase reactions of HNO 3 with Cl − , Cl − H 2 O, and Cl − HCl, of Cl 2 with Cl − H 2 O and Cl − HCl, and of HCl with Cl − H 2 O. Rate constants and product ions have been determined at room temperature and at
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd33bdb8f3a9e61ff19f18cb13aa85dc
https://doi.org/10.1016/s1387-3806(98)14163-5
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7
Low temperature anneal of electron irradiation induced defects in p type silicon
Autor: G. Langouche, A.-M. Van Bavel, Jan Vanhellemont, Herman Maes, M.-A. Trauwaert
Publikováno v: Materials Science and Technology. 14:1295-1298
Two dominant defect levels with activation energy E v + 0.19 eV and E v + 0.36 eV (C s C i or C i O i complex) are created in the lower part of the bandgap after low energy electron irradiation of boron doped float zone or Czochralski silicon. The E
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::821ad489f7ecb275951c9a61350757c5
https://doi.org/10.1179/mst.1998.14.12.1295
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8
The atomic structure of Co dimers in silicon
Autor: Guido Langouche, A-M Van Bavel, H Overhof
Publikováno v: Semiconductor Science and Technology. 13:108-115
We present Mossbauer spectra for Co-related point defects in silicon with emphasis on Co dimers. With the help of ab initio total energy calculations we show that dimers constructed from two interstitial point defects would not be stable. Dimers invo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::768b362e7651a2651bc18dc6b7411063
https://doi.org/10.1088/0268-1242/13/1/017
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10
Mössbauer spectroscopy on bent Si crystals
Autor: Guido Langouche, Stefan Degroote, A.-M. Van Bavel, André Vantomme
Publikováno v: Il Nuovo Cimento D. 18:293-297
We have shown through Mossbauer spectroscopy that the electric field gradient (EFG), associated with an atomic defect, is sensitive to the bending of ultrathin Si crystals. The changes in the EFG depend on the bending direction. A direct application
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::510e8bf160aeb583263378f086bdfdec
https://doi.org/10.1007/bf02458907
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