Zobrazeno 1 - 10
of 30
pro vyhledávání: '"A.-M. Minondo"'
Autor:
O. Rozeau, M. Minondo, Maud Vinet, Jean-Charles Barbe, Patrick Scheer, Thierry Poiroux, Andre Juge, Marie-Anne Jaud, Sebastien Martinie
Publikováno v:
IEEE Transactions on Electron Devices. 62:2760-2768
A detailed presentation of the latest version of Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of ultrathin body and BOX fully depleted silicon-on-insulator transistors in all bias config
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::990ae62f6e330983eeef2f0a4d69dd2b
https://doi.org/10.1109/ted.2015.2458336
https://doi.org/10.1109/ted.2015.2458336
Autor:
Patrick Scheer, M. Minondo, Maud Vinet, Thierry Poiroux, Sebastien Martinie, Andre Juge, Marie-Anne Jaud, Jean-Charles Barbe, O. Rozeau
Publikováno v:
IEEE Transactions on Electron Devices. 62:2751-2759
A detailed presentation of the latest version of the Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin body and buried oxide fully depleted silicon-on-insulator transis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d79c38db2bff284f721aa6172c56dfb0
https://doi.org/10.1109/ted.2015.2458339
https://doi.org/10.1109/ted.2015.2458339
Autor:
R. Bouchakour, Alexandre Dray, Pascal Masson, M. Minondo, Andre Juge, Fabien Gilibert, Francois Agut, Denis Rideau
Publikováno v:
IEICE Transactions on Electronics. :829-837
We present measurements of Gate-Induced-Drain-Leakage at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high Drain-to-Gate voltage v DG , we also observed Trap-Assisted-Tunneling leakage current at lower
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c8ff1c8596397e4f643e0955d9dd1b8
https://doi.org/10.1093/ietele/e88-c.5.829
https://doi.org/10.1093/ietele/e88-c.5.829
Autor:
Andre Juge, Patrick Scheer, Fabien Gilibert, Denis Rideau, M. Minondo, Sandrine Bernardini, Gilles Gouget, David Roy
Publikováno v:
Solid-State Electronics. 48:597-608
This paper summarizes various aspects of gate leakage on MOSFETs DC and AC characteristics. Based on measurements on test structures with various electrical silicon oxide thicknesses (from 21 to 13 A) and areas (from 27,000 to 2 μm 2 ), we show that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a431badbb195b933de66da3202e4f0f3
https://doi.org/10.1016/j.sse.2003.09.020
https://doi.org/10.1016/j.sse.2003.09.020
Publikováno v:
Skin Pharmacology and Physiology. 14:4-9
The ultrastructural study of the intercellular spaces of the human stratum corneum was based on transmission electron microscopy of thin vertical sections and freeze-fracture replicas, field emission scanning electron microscopy and immunofluorescenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f52550b1f97697d8cd1950cb6c0a9f8
https://doi.org/10.1159/000056383
https://doi.org/10.1159/000056383
Publikováno v:
Microelectronics Reliability. 37:53-60
Shallow p+/n junctions are produced by low energy Boron or Boron Fluorine implantation into n-type silicon preamorphised substrate. Preamorphisation step was obtained by high dose Ge+ ions implantation at various energies ranging between 30 to 150 ke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::297f7901c8e5c1895de42a2d49be4230
https://doi.org/10.1016/0026-2714(96)00238-7
https://doi.org/10.1016/0026-2714(96)00238-7
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbdc1d001b82c9aaf16bb27f75971817
https://doi.org/10.7567/ssdm.2010.k-1-1
https://doi.org/10.7567/ssdm.2010.k-1-1
Autor:
M. Minondo, C. Raynaud, Herve Jaouen, F. Morancho, G. Bertrand, B. Rauber, Alexandre Giry, Sylvie Ortolland, S. Hniki, O. Bon
Publikováno v:
2009 Proceedings of the European Solid State Device Research Conference.
New powerful specific test structures are proposed to characterize the thermal resistance R th of multi-fingered structures including side and thermal coupling effects. The benefit of such structures over standard ones is clearly demonstrated. Thanks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::169689f0254b15d91fd197a5b9844c27
https://doi.org/10.1109/essderc.2009.5331544
https://doi.org/10.1109/essderc.2009.5331544
Autor:
Sylvie Ortolland, B. Rauber, G. Bertrand, Alexandre Giry, M. Minondo, Herve Jaouen, C. Raynaud, O. Bon, Frédéric Morancho, S. Hniki
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
Understanding self-heating effect is essential in order to analyze and model the performances of high power transistors [1]. In this paper a new test structure to model thermal coupling on multi-fingered devices is proposed. This structure allows ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5277a8d88ed81bee6e333866cbbabb53
https://doi.org/10.1109/ispsd.2009.5158010
https://doi.org/10.1109/ispsd.2009.5158010
Publikováno v:
2007 IEEE International Electron Devices Meeting.
This paper reports a predictive analytical transmission RLC model of 3D MIM capacitors in a 0.13 mum BICMOS technology. The aim of this predictive model is to help circuit design with compatible CPU time. It allows adjusting process parameters in ord
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27ef6b8d56791aa25c9818c435b98504
https://doi.org/10.1109/iedm.2007.4418998
https://doi.org/10.1109/iedm.2007.4418998