Zobrazeno 1 - 10
of 174
pro vyhledávání: '"A.-M. Flank"'
Autor:
Juan Angel Sans, Jean-Paul Itié, Alfredo Segura, Julio Pellicer-Porres, Juan F. Sánchez-Royo, Alain Polian, P. Lagarde, A. M. Flank
Publikováno v:
Superlattices and Microstructures. 42:251-254
We present the results of x-ray absorption measurements carried out in Zn 1− x Mn x O thin films under high pressure. The Mn environment remains essentially the same for nominal Mn concentrations given by x = 0.05 , 0.1, 0.15 and 0.25. Both the XAN
Autor:
M. Amboage, Juan F. Sánchez-Royo, P. Lagarde, Julio Pellicer-Porres, Jean-Paul Itié, Francisco Javier Manjón, V. V. Ursaki, Ana Segura, Alain Polian, A. M. Flank, Ion Tiginyanu
Publikováno v:
Phys. stat. sol.
Phys. stat. sol., 2007, 244, pp.229-233. ⟨10.1002/pssb.200672522⟩
Phys. stat. sol., 2007, 244, pp.229-233. ⟨10.1002/pssb.200672522⟩
International audience; We report a combined study of the structural and electronic properties of the spinel-type semiconductor MnIn2S4 under high pressures by means of X-ray diffraction (ADXRD), X-ray absorption (XAS), and op- tical absorption measu
Publikováno v:
Journal of Non-Crystalline Solids. 330:196-215
We report the effect of annealing on the properties of amorphous hydrogenated silicon carbide thin films. The samples were deposited onto different substrates by plasma enhanced chemical vapor deposition at temperatures between 300 and 350 °C. The g
Publikováno v:
Journal of Physics D: Applied Physics. 35:1428-1432
The effects of laser irradiation in controlled atmospheres (methane and nitrogen) on the structural properties of single crystalline silicon have been studied by extended x-ray absorption fine structure (EXAFS). The incorporation of carbon in the sil
Autor:
Karim Dahmouche, A. M. Flank, Patrick Judeinstein, Celso Valentim Santilli, Sandra Helena Pulcinelli, Valérie Briois, J. A. Chaker
Publikováno v:
Journal of Non-Crystalline Solids. 304:109-115
Siloxane-polypropyleneoxide (PPO) hybrids doped with sodium perchlorate (NaClO 4 ) obtained by the sol gel process were prepared with two PPO molecular weights (2000 and 4000 g/mol) and two sodium concentrations such as [O]/[Na] = 4 and 15 (O being t
Publikováno v:
Journal of Solid State Chemistry. 163:163-177
Amorphous nitrided galloaluminophosphates "AlGaPON" catalysts with nitrogen contents varying from 0 to 23.3 wt% N were obtained by nitriding an Al0.5Ga0.5PO4 precursor under ammonia flow at 750degreesC in a tubular furnace. The structural changes ind
Autor:
C.A. Villacorta Cardoso, Manfredo Harri Tabacniks, Márcia Carvalho de Abreu Fantini, A. M. Flank, Inés Pereyra, R.J. Prado
Publikováno v:
Journal of Non-Crystalline Solids. 283:1-10
This paper reports improvements on the chemical and structural order of amorphous hydrogenated silicon carbide thin films, deposited by plasma enhanced chemical vapor deposition (PEVCD) at the `starving plasma regime', from a gaseous mixture of silan
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 178:214-219
Ion irradiation (350 keV Xe ions) of Si/C layer systems leads to atomic mixing and a solid state reaction between the two constituents. The ballistic model underestimates the ion beam mixing rate and, in contradiction to the model, a quadratic depend
Publikováno v:
Scopus-Elsevier
We present here results concerning the first attempt of determining the trapping site structure of molecules isolated in inert matrices at low temperature by the EXAFS (Extended X-ray Absorption Fine Structure) method. The experiments have been perfo
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :385-389
In order to investigate ion beam mixing and crystallization in the silicon–carbon system, Si/C multilayers were deposited on Si substrates and irradiated with Kr and Xe ions at temperatures to 873 K. The composition of the layer system as a functio