Zobrazeno 1 - 10
of 113
pro vyhledávání: '"A. von Czarnowski"'
Autor:
Zatsepin, D. A., Zatsepin, A. F., Boukhvalov, D. W., Kurmaev, E. Z., Gavrilov, N. V., Skorikov, N. A., von Czarnowski, A., Fitting, H. -J.
This is the abstract. The results of measurements of X-ray photoelectron spectra (XPS) of a-SiO2-host material after pulsed implantation with [Mn+] and [Co+, Mn+]-ions as well as DFT-calculations are presented. The low-energy shift is found in XPS Si
Externí odkaz:
http://arxiv.org/abs/1505.06901
Autor:
Zatsepin, A.F., Buntov, E.A., Mikhailovich, A.P., Slesarev, A.I., Schmidt, B., von Czarnowski, A., Fitting, Hans-Joachim
Publikováno v:
In Journal of Luminescence January 2016 169 Part A:143-150
Publikováno v:
Optics Communications. 426:584-588
The discussion of ultrathin crystalline silicon solar cell (UCSC) thickness and light enhancement patterns has long been a practical topic in its field with the objective of achieving optimum efficiency. In this work, we distinguish between the effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ed4d3748c9e16909f394740c38b9a9b
https://doi.org/10.1016/j.optcom.2018.06.003
https://doi.org/10.1016/j.optcom.2018.06.003
Publikováno v:
In Journal of Non-Crystalline Solids 2007 353(5):546-549
Publikováno v:
In Radiation Measurements August-December 2004 38(4-6):649-653
Publikováno v:
In Journal of Non-Crystalline Solids 2002 303(2):218-231
Autor:
A. P. Mikhailovich, Hans-Joachim Fitting, Bernd Schmidt, A. F. Zatsepin, A. I. Slesarev, A. von Czarnowski, E. A. Buntov
Publikováno v:
Journal of Luminescence 169(2015), 143-150
As an example of thin silica films, 30 nm SiO 2 –Si heterostructures implanted with Ge + ions (10 16 cm −2 fluence) and rapid thermally annealed (RTA) at 950 °C are studied by means of optically stimulated electron emission (OSEE) in the spectra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd68a8ab09755b0f03a536247e9e2295
https://doi.org/10.1016/j.jlumin.2015.08.073
https://doi.org/10.1016/j.jlumin.2015.08.073
Autor:
D. W. Boukhvalov, Ernst Z. Kurmaev, A. F. Zatsepin, Hans-Joachim Fitting, N. V. Gavrilov, A. von Czarnowski, N. A. Skorikov, D. A. Zatsepin
Publikováno v:
physica status solidi (b). 252:2185-2190
XPS measurements and DFT calculations are supported by Russian Science Foundation (Grant no. 14-22-00004). The preparation of a-SiO 2 samples and ion-implantation treatment are supported by Deutsche Forschungsgemeinschaft-DFG (German Research Foundat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::706d476bf9b31194005151b93d63abdc
https://doi.org/10.1002/pssb.201552103
https://doi.org/10.1002/pssb.201552103
Publikováno v:
In Applied Surface Science 2001 179(1):191-195