Dockless E-Scooter: A Green Solution for Mobility? Comparative Case Study between Dockless E-Scooters, Displaced Transport, and Personal E-Scooters

Autor: Coline Ruwet, Vanessa Zeller, Pierre D'Ans, Loïc de Jamblinne de Meux, Hélie Moreau, Wouter Achten

Publikováno v: Sustainability, Vol 12, Iss 5, p 1803 (2020)
Sustainability
Volume 12
Issue 5
Sustainability, 12 (5

This study applies a life cycle assessment (LCA) to the shared dockless standing e-scooter system that is established in Brussels. The results are given for four impact categories: global warming potential (GWP), particulate matter formation, mineral

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09cb2d394c3fb699f83f774dd2bb28cc
https://www.mdpi.com/2071-1050/12/5/1803

Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications

Autor: Albert de Jamblinne de Meux, Paul Heremans, Bo Hou, Ashutosh Tripathi, Gerwin H. Gelinck, Geoffrey Pourtois, Edsger C. P. Smits

Publikováno v: Advanced Materials, 2, 28
Advanced Materials, 28(22), 4266-4282. Wiley-VCH Verlag

The increasing interest in flexible electronics and flexible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-film transistors used in active-matrix display

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9eaf7b45e62bedc5acf4182ed0ddcbb
https://research.tue.nl/en/publications/1d69a2f2-7de0-4bbc-833a-a3398691c472

Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

Autor: A. de Jamblinne de Meux, Paul Heremans, Jan Genoe, Geoffrey Pourtois

Publikováno v: Physical Review B. 97

Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::502664b040019d59d3d7e3ea2dc42726
https://doi.org/10.1103/physrevb.97.045208

Flexible metal-oxide thin film transistor circuits for RFID and health patches

Autor: Paul Heremans, Gerwin H. Gelinck, Nikolas P. Papadopoulos, Jan Genoe, S. Steudel, A. de Jamblinne de Meux, Ashutosh Tripathi, Maarten Rockele, Kris Myny, Manoj Nag

Publikováno v: 2016 IEEE International Electron Devices Meeting, IEDM 2016, 6.3.1-6.3.4
STARTPAGE=6.3.1;ENDPAGE=6.3.4;TITLE=2016 IEEE International Electron Devices Meeting, IEDM 2016
62nd IEEE International Electron Devices Meeting, IEDM 2016. 3 December 2016 through 7 December 2016, 6.3.1-6.3.4
2016 IEEE International Electron Devices Meeting (IEDM)

We discuss in this paper the present state and future perspectives of thin-film oxide transistors for flexible electronics. The application case that we focus on is a flexible health patch containing an analog sensor interface as well as digital elec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4517789014d00f8f4f2a7c6956c2101
https://research.tue.nl/nl/publications/24d82fdd-f07e-44ef-91aa-17ca57094572

Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor : structure, tail states and strain effects

Autor: Paul Heremans, Geoffrey Pourtois, Jan Genoe, A. de Jamblinne de Meux

Publikováno v: Journal of physics: D: applied physics

We study the evolution of the structural and electronic properties of crystalline indium gallium zinc oxide (IGZO) upon amorphization by first-principles calculation. The bottom of the conduction band (BCB) is found to be constituted of a pseudo-band

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::95b2fe7b88b5bf5306c8f36aae621fce
https://hdl.handle.net/10067/1302770151162165141