Zobrazeno 1 - 10
of 75
pro vyhledávání: '"A. Zerrai"'
Publikováno v:
In Physica B: Physics of Condensed Matter 2003 336(3):362-368
Publikováno v:
In Materials Science & Engineering C 2002 21(1):303-305
Publikováno v:
In Materials Science in Semiconductor Processing 6 February 2001 4(1-3):331-334
Autor:
Zumbiehl, A *, Mergui, S, Ayoub, M, Hage-Ali, M, Zerrai, A, Cherkaoui, K, Marrakchi, G, Darici, Y
Publikováno v:
In Materials Science & Engineering B 14 February 2000 71(1-3):297-300
Publikováno v:
Journal of Applied Physics; 5/1/2000, Vol. 87 Issue 9, p4293, 10p
Autor:
Zumbiehl, A a, *, Fougeres, P b, Hage-Ali, M a, Koebel, J.M a, Siffert, P a, Zerrai, A c, Cherkaoui, K c, Marrakchi, G c, Bremond, G c
Publikováno v:
In Journal of Crystal Growth 1999 197(3):670-674
Autor:
Zerrai, A. a, *, Dammak, M. a, Marrakchi, G. a, Brémond, G. a, Triboulet, R. b, Marfaing, Y. b
Publikováno v:
In Journal of Crystal Growth 1999 197(3):729-732
Autor:
Zerrai, A a, *, Cherkaoui, K a, Marrakchi, G a, Brémond, G a, Fougères, P b, Hage-Ali, M b, Koebel, J.M b, Siffert, P b
Publikováno v:
In Journal of Crystal Growth 1999 197(3):646-649
Autor:
Zerrai, A., Bremond, G.
Publikováno v:
Journal of Applied Physics; 11/15/1998, Vol. 84 Issue 10, p5554, 6p
Publikováno v:
Materials Science in Semiconductor Processing. 4:331-334
We have investigated the presence of defects and their role on the efficiency of thin-film SiGe/Si solar cells. Temperature-dependent I–V, and DLTS measurements revealed the presence of a main defect that introduces a deep acceptor level (0/-) near
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f6a7605bd7983b8b8c43ae0d1c70646
https://doi.org/10.1016/s1369-8001(00)00101-3
https://doi.org/10.1016/s1369-8001(00)00101-3