Zobrazeno 1 - 10
of 37
pro vyhledávání: '"A. Yu. Leshko"'
Autor:
Sergey O. Slipchenko, Ilya S. Shashkin, Dmitry A. Veselov, Vladislav A. Kriychkov, Alyona E. Kazakova, Andrey Yu. Leshko, Viktor V. Shamakhov, Dmitry N. Nikolaev, Nikita A. Pikhtin
Publikováno v:
Journal of Lightwave Technology. 40:2933-2938
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c75234eb39871058bc7757e5383ada1
https://doi.org/10.1109/jlt.2022.3144663
https://doi.org/10.1109/jlt.2022.3144663
Autor:
I. S. Shashkin, A. Yu. Leshko, V. V. Shamakhov, D. N. Romanovich, V. A. Kapitonov, K. V. Bakhvalov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop’ev
Publikováno v:
Technical Physics Letters. 47:368-371
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77ee1dffdae023d5fc83226b8f5062a9
https://doi.org/10.1134/s1063785021040155
https://doi.org/10.1134/s1063785021040155
Publikováno v:
Psychology: theory and practice. :100-107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6de8a09d459d7dab78225dcc5898bb79
https://doi.org/10.31339/2617-9598-2019-1(3)-100-107
https://doi.org/10.31339/2617-9598-2019-1(3)-100-107
Autor:
Peter S. Kop’ev, V. V. Zolotarev, Nikita A. Pikhtin, V. V. Shamakhov, V. A. Kapitonov, Sergey O. Slipchenko, Aleksandr A. Podoskin, Andrei Yu. Leshko
Publikováno v:
Novel In-Plane Semiconductor Lasers XIX.
Studies of multimode and single-mode semiconductor lasers with a surface distributed Bragg reflector (S-DBR) were carried out. S-DBR with a period of 2 μm was formed in the upper cladding layer by contact photolithography. The spectrum width for all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a8a3bb8356e689b29ebf6193f36093d
https://doi.org/10.1117/12.2546174
https://doi.org/10.1117/12.2546174
Autor:
Z. N. Sokolova, Ya V Lubyanskiy, A Yu Leshko, Nikita A. Pikhtin, I. S. Tarasov, Sergey O. Slipchenko, V. V. Zolotarev, N. V. Voronkova
Publikováno v:
Quantum Electronics. 45:1091-1097
High-order surface diffraction gratings acting as a distributed Bragg reflector (DBR) in mesa stripe semiconductor lasers (λ = 1030 nm) have been studied theoretically and experimentally. Higher order interfering radiation modes (IRMs), which propag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c1fe506332bf17fdc5f44afbcbbc8b
https://doi.org/10.1070/qe2015v045n12abeh015871
https://doi.org/10.1070/qe2015v045n12abeh015871
Autor:
A. V. Lyutetskiy, M. G. Rastegaeva, Ya V Lubyanskiy, A Yu Leshko, Nikita A. Pikhtin, Sergey O. Slipchenko, I. S. Tarasov, V. V. Zolotarev, K.V. Bakhvalov
Publikováno v:
Quantum Electronics. 44:907-911
We have studied the spectral characteristics of multimode semiconductor lasers with high-order surface diffraction gratings based on asymmetric separate-confinement heterostructures grown by metalorganic vapour phase epitaxy (λ = 1070 nm). Experimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba7ffb20979364637a42958542627ad3
https://doi.org/10.1070/qe2014v044n10abeh015475
https://doi.org/10.1070/qe2014v044n10abeh015475
Autor:
I. N. Arsent’ev, A. A. Podoskin, V. V. Shamakhov, D. N. Nikolaev, A. V. Lyutetskii, Z. N. Sokolova, I. S. Tarasov, V. V. Zolotarev, Nikita A. Pikhtin, L. S. Vavilova, K. V. Bakhvalov, A. Yu. Leshko, Sergey O. Slipchenko
Publikováno v:
Semiconductors. 47:122-126
Laser diodes with a deep built-in trapezoidal large-period diffraction grating have been developed on the basis of InGaAs/GaAs/AlGaAs heterostructures. The electroluminescence and stimulated emission spectra and light-current characteristics of diffr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68e3055de02a84e68223147f17352bd0
https://doi.org/10.1134/s1063782613010247
https://doi.org/10.1134/s1063782613010247
Autor:
M. G. Rastegaeva, V. V. Vasil’eva, I. S. Shashkin, A. Yu. Leshko, I. S. Tarasov, D. A. Vinokurov, Nikita A. Pikhtin, V. V. Zolotarev, A. N. Petrunov, Z. N. Sokolova
Publikováno v:
Semiconductors. 46:241-246
A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf958faead6a173f0cb38b599e9cfe8a
https://doi.org/10.1134/s1063782612020236
https://doi.org/10.1134/s1063782612020236
Autor:
I. S. Tarasov, I. M. Gadzhiev, A. V. Lyutetskiĭ, M. S. Buyalo, R. I. Grigor’ev, E. L. Portnoi, A. Yu. Leshko, D. A. Vinokurov, I. O. Bakshaev, Nikita A. Pikhtin, Sergey O. Slipchenko
Publikováno v:
Technical Physics Letters. 36:1038-1041
Passive mode locking (PML) regimes in two-section lasers with quantum wells in broad waveguides operating at λ = 1.06 μm have been studied. The room temperature spectrum of the saturable absorber section retains exciton peak at the absorption edge,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::438610de181df1ef129b88335c7ccb93
https://doi.org/10.1134/s1063785010110192
https://doi.org/10.1134/s1063785010110192
Autor:
I. S. Tarasov, A. V. Lyutetskiy, Yu. A. Ryaboshtan, Z. N. Sokolova, Nikita A. Pikhtin, A. Yu. Leshko, Aleksandr A Marmalyuk, Sergey O. Slipchenko, N. V. Fetisova
Publikováno v:
Semiconductors. 43:1602-1605
Advantages of the concept of high-powered semiconductor nanoheterostructure lasers for the spectral range 1700–1800 nm, grown by MOCVD in the InGaAsP/InP solid solution system, have been experimentally demonstrated. It has been found that using an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e3ef40689513b73a278bbf95b775020
https://doi.org/10.1134/s1063782609120057
https://doi.org/10.1134/s1063782609120057