Zobrazeno 1 - 10
of 435
pro vyhledávání: '"A. Y. Polyakov"'
Autor:
A. Y. Polyakov, V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, E. B. Yakimov, M. P. Scheglov, I. V. Shchemerov, A. A. Vasilev, A. A. Kochkova, A. V. Chernykh, A. V. Chikiryaka, S. J. Pearton
Publikováno v:
APL Materials, Vol 10, Iss 6, Pp 061102-061102-8 (2022)
Thick (23 µm) films of κ-Ga2O3 were grown by Halide Vapor Phase Epitaxy (HVPE) on GaN/sapphire templates at 630 °C. X-ray analysis confirmed the formation of single-phase κ-Ga2O3 with half-widths of the high-resolution x-ray diffraction (004), (0
Externí odkaz:
https://doaj.org/article/285c6d104e244c4782c22b2328b94d3f
Autor:
E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, A. S. Shikoh, F. Ren, S. J. Pearton
Publikováno v:
APL Materials, Vol 8, Iss 11, Pp 111105-111105-6 (2020)
The photocurrent produced by 259 nm wavelength excitation was measured in β-Ga2O3 Schottky diodes before and after neutron irradiation. These samples differed by the density of deep acceptors in the lower half of the bandgap as detected by capacitan
Externí odkaz:
https://doaj.org/article/880ae276cd00401d8965e67cba56554b
Autor:
A. Y. Polyakov, In-Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, P. H. Carey, F. Ren, David J. Smith, S. J. Pearton
Publikováno v:
APL Materials, Vol 7, Iss 6, Pp 061102-061102-7 (2019)
Films of β-Ga2O3 grown by halide vapor phase epitaxy on native substrates were subjected to Ar inductively coupled plasma treatment. As a result, the built-in voltage of Ni Schottky diodes deposited on the plasma treated surfaces decreased from 1 V
Externí odkaz:
https://doaj.org/article/03dbaf3babd448b4b9bab112afdbef5f
Autor:
A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, A. V. Chernykh, K. D. Shcherbachev, A. S. Shikoh, A. Kochkova, A. A. Vasilev, S. J. Pearton
Publikováno v:
APL Materials, Vol 7, Iss 5, Pp 051103-051103-7 (2019)
Epitaxial layers of α-Ga2O3 with different Sn doping levels were grown by halide vapor phase epitaxy on sapphire. The films had shallow donor concentrations ranging from 1017 to 4.8 × 1019 cm−3. Deep level transient spectroscopy of the lowest dop
Externí odkaz:
https://doaj.org/article/62c030d840d44b248fc22aab13c1599b
Autor:
Dae-Woo Jeon, Hoki Son, Jonghee Hwang, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, S. J. Pearton, In-Hwan Lee
Publikováno v:
APL Materials, Vol 6, Iss 12, Pp 121110-121110-9 (2018)
Undoped epitaxial films of α-Ga2O3 were grown on basal plane sapphire substrates by halide vapor phase epitaxy (HVPE) in three different modes: standard HVPE, HVPE with constant flow of Ga and pulsed supply of O2 (O2-control growth regime), and with
Externí odkaz:
https://doaj.org/article/d19f53f54cca4ee28bf9b16849577186
Autor:
Alexander Y. Polyakov, Danila S. Saranin, Ivan V. Shchemerov, Anton A. Vasilev, Andrei A. Romanov, Anastasiia I. Kochkova, Pavel Gostischev, Alexey V. Chernykh, Luiza A. Alexanyan, Nikolay R. Matros, Petr B. Lagov, Aleksandr S. Doroshkevich, Rafael Sh. Isayev, Yu. S. Pavlov, Alexander M. Kislyuk, Eugene B. Yakimov, Stephen J. Pearton
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-15 (2024)
Abstract p-NiO/n-Ga2O3 heterojunction (HJ) diodes exhibit much larger changes in their properties upon 1.1 MeV proton irradiation than Schottky diodes (SDs) prepared on the same material. In p-NiO/Ga2O3 HJ diodes, the narrow region adjacent to the HJ
Externí odkaz:
https://doaj.org/article/35ea15106f7e448faf0d9b4fda9cca71
Autor:
A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, S. J. Pearton, F. Ren, A. V. Chernykh, P. B. Lagov, T. V. Kulevoy
Publikováno v:
APL Materials, Vol 6, Iss 9, Pp 096102-096102-10 (2018)
Hole traps in hydride vapor phase epitaxy β-Ga2O3 films were studied by deep level transient spectroscopy with electrical and optical excitation (DLTS and ODLTS) and by photocapacitance and temperature dependence measurements. Irradiation with 20 Me
Externí odkaz:
https://doaj.org/article/51030966a0d541259a7ed8198f7b791a
Publikováno v:
Ecology and Evolution, Vol 13, Iss 12, Pp n/a-n/a (2023)
Abstract The richness and composition of a small mammal community inhabiting semiarid California oak woodland may be changing in response to climate change, but we know little about the causes or consequence of these changes. We applied a capture‐m
Externí odkaz:
https://doaj.org/article/25089537b8bf431e91b9d52fda3fb674
Autor:
T. S. Chudnova, E. A. Baryakh, M. S. Litvinenko, T. N. Tolstykh, O. L. Kochneva, E. Y. Grishina, E. N. Misyurina, K. V. Yatskov, E. I. Zhelnova, Y. Y. Polyakov, K. V. Kaluzhskaya
Publikováno v:
Онкогематология, Vol 17, Iss 2, Pp 107-120 (2022)
In the era of COVID-19, the chemotherapy of patients with hematological malignancies has become the cornerstone in hematology. Secondary immunodeficiency as a result of hemoblastosis, predisposes to a more severe course of coronavirus infection, and
Externí odkaz:
https://doaj.org/article/4193169dc7fd4d628f4896e9cce3fcb9
Autor:
Alexander Y. Polyakov, Eugene B. Yakimov, Vladimir I. Nikolaev, Alexei I. Pechnikov, Andrej V. Miakonkikh, Alexander Azarov, In-Hwan Lee, Anton A. Vasilev, Anastasiia I. Kochkova, Ivan V. Shchemerov, Andrej Kuznetsov, Stephen J. Pearton
Publikováno v:
Crystals, Vol 13, Iss 9, p 1400 (2023)
In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an interplay between donor-like hydrogen configurations and acceptor compl
Externí odkaz:
https://doaj.org/article/86f41d6f923e407ea9ebcca20a4c85fd