Zobrazeno 1 - 4
of 4
pro vyhledávání: '"A. Veioso"'
Autor:
A. Veioso, Philippe Absil, Jorge A. Kittl, R. Mitsuhashi, Christoph Kerner, Stephan Brus, D. Baute, Christa Vrancken, J.-F. de Marneffe, Hui Yu, Masaaki Niwa, B. Onsia, T. Y. Hoffmann, X. Shi, S. Locorotondo, Thomas Chiarella, Rita Vos, Malgorzata Jurczak, Vasile Paraschiv, Peter Verheyen, Roger Loo, Sophia Arnauts, Barry O'Sullivan, Anne Lauwers, Serge Biesemans, Sofie Mertens, Danny Goossens, S. Ito, Thierry Conard, Shou-Zen Chang
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
We report, for the first time, a comprehensive study on the compatibility of state-of-the-art performance boosters with FUSI/HfSiON technology, resulting in record high-VT NMOS and PMOS devices with 725/370 muA/mum (at VDD=1.1 V, Ioff=20 pA/mum and J
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America; 5/25/2010, Vol. 107 Issue 21, p9556-9561, 6p
Autor:
Veioso, A., Verheyen, P., Vos, R., Brus, S., Ito, S., Mitsuhashi, R., Paraschiv, V., Shi, X., Onsia, B., Arnauts, S., Loo, R., Lauwers, A., Conard, T., de Marneffe, J.-F., Goossens, D., Baute, D., Locorotondo, S., Chiarella, T., Kerner, C., Vrancken, C.
Publikováno v:
2007 IEEE Symposium on VLSI Technology; 2007, p200-201, 2p
Autor:
Püschel, Markus, Moura, José M. F., Singer, Bryan, Xiong, Jlanxin, Johnson, Jeremy, Padua, David, Veioso, Manuela, Johnson, Robert W.
Publikováno v:
International Journal of High Performance Computing Applications; Summer2004, Vol. 18 Issue 2, p279-279, 1p