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Resonance Method for Measuring Parameters of the Spin Transport in a Spin-Valve Structure.

Autor: Strelkov, N. V.¹ (AUTHOR) nik@magn.phys.msu.ru, Vedyaev, A. V.¹ (AUTHOR)

Publikováno v: Journal of Experimental & Theoretical Physics. Apr2023, Vol. 136 Issue 4, p529-533. 5p.

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The two-bands model of the magnetic tunnel junctions in the Fe/Cr/MgO/Fe structure

Autor: Vedyaev, A., Ryzhanova, N., Strelkov, N., Chshiev, M., Lystseva, L., Dieny, B.

In this paper we present theoretical studies of spin dependent transport in Fe/Cr/MgO/Fe tunnel junctions with non-collinear alignment of magnetizations of metallic layers comprising these MTJs. Calculations are performed with use of non-equilibrium

Externí odkaz: http://arxiv.org/abs/0910.3046

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Spin Diode Based on Fe/MgO Double Tunnel Junction

Autor: Iovan, A., Andersson, S., Naidyuk, Yu. G., Vedyaev, A., Dieny, B., Korenivski, V.

We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonan

Externí odkaz: http://arxiv.org/abs/0705.2375

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Diode effect in magnetic tunnel junctions

Autor: Kanjouri, F., Ryzhanova, N., Dieny, B., Strelkov, N., Vedyaev, A.

The influence on the I-V characteristics and tunnel magnetoresistance (TMR), of impurities embedded into the insulating barrier I separating the two ferromagnetic electrodes F of a magnetic tunnel junction, was theoretically investigated. When the en

Externí odkaz: http://arxiv.org/abs/cond-mat/0412351

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