Zobrazeno 1 - 2
of 2
pro vyhledávání: '"A. Vaufredaz"'
Publikováno v:
IEEE 2011 International SOI Conference.
Though Silicon-on-Sapphire (SOS) has many applications for RF circuits, compressive strain in the hetero-epitaxially deposited silicon film reduces the electron mobility and diminishes its high-frequency performance. To eliminate this strain, we bond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fcb3e2b3d4cc608abfa45f5177036a4
https://doi.org/10.1109/soi.2011.6081706
https://doi.org/10.1109/soi.2011.6081706
Publikováno v:
2011 IEEE International SOI Conference (SOI); 2011, p1-2, 2p