Zobrazeno 1 - 8
of 8
pro vyhledávání: '"A. V. Zablotsky"'
Autor:
А. С. Kashuba, A. V. Zablotsky, E. V. Korostylev, A. A. Kuzin, E. V. Permikina, V. V. Arbenina
Publikováno v:
Тонкие химические технологии, Vol 5, Iss 5, Pp 19-23 (2010)
Data of morphology of epitaxial layers CdXHg1-XTe, which has been grown on substrates GaAs (310) by MBE, have been presented. Peculiarities of growing V-defects have been studied by scanning electronic microscopy techniques and EDS. The structure, or
Externí odkaz:
https://doaj.org/article/ee6e21a0db024bd496d6a3a8c2438abe
Autor:
Sergey A. Dvoretsky, V. S. Varavin, D. V. Marin, N. L. Bazhenov, M. V. Yakushev, S. V. Zablotsky, K. D. Mynbaev, A. V. Shilyaev
Publikováno v:
Semiconductors. 50:208-211
Defects in mercury-cadmium-telluride heteroepitaxial structures (with 0.3 to 0.4 molar fraction of cadmium telluride) grown by molecular-beam epitaxy on silicon substrates are studied. The low-temperature photoluminescence method reveals that there a
Autor:
Yu. A. Semeney, B. A. M. Shaibonov, L. G. Sveshnikova, B. V. Antokhonov, V. S. Ptuskin, E. N. Konstantinov, C. Spiering, A. Chiavassa, S. F. Berezhnev, O. A. Gress, I. V. Yashin, L. V. Pankov, J. Snyder, V. A. Kozhin, M. Stockham, B. K. Lubsandorzhiev, N. N. Kalmykov, V. V. Prosin, A. V. Skurikhin, N. M. Budnev, M. I. Panasyuk, R. R. Mirgazov, A. V. Zablotsky, A.V. Korobchenko, A. N. Dyachok, E.G. Popova, A. A. Silaev, A. V. Zagorodnikov, N. I. Karpov, O. A. Chvalaiev, E. E. Korosteleva, D. Z. Besson, L. A. Kuzmichev, R. Wischnewski
Publikováno v:
Proceedings of 25th Texas Symposium on Relativistic Astrophysics — PoS(Texas 2010).
Autor:
B. V. Antokhonov, S. F. Berezhnev, D. Besson, N. M. Budnev, R. Wischnevski, O. A. Gress, A. N. Diachok, A. V. Zablotsky, A. V. Zagorodnikov, N. N. Kalmykov, N. I. Karpov, V. A. Kozhin, E. E. Korosteleva, A. V. Korobchenko, L. A. Kuzmichev, A. Chiavassa, B. K. Lubsandorzhiev, R. R. Mirgazov, M. I. Panasyuk, L. V. Pankov, V. V. Prosin, V. S. Ptuskin, Yu. A. Semeney, A. A. Silaev, A. V. Skurikhin, M. Stokham, O. A. Chvalaiev, B. A. Shaibonov, J. Snyder, Ch. Spiering, I. V. Yashin
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 75
A new array for studying ultra-high energy cosmic rays was inaugurated in 2009 in the Tunka Valley, about 50 km from Lake Baikal. Having an area of 1 km2, the new facility allows us to study cosmic rays with energies of 1015–1018 eV via the a unifi
Autor:
E. E. Koresteleva, N. N. Kalmykov, B. K. Lubsandorzhiev, N. Karpov, I.A. Yashin, Yu. A. Semeney, A. Chiavassa, B. A. M. Shaibonov, D. Besson, P.M. Mirgazov, A. V. Skurikhin, A. V. Zablotsky, L. A. Kuzmichev, Ch. Spiering, V. S. Ptuskin, L. V. Pankov, N. M. Budnev, R. Wischnewski, O. A. Gress, V. A. Kozhin, O. Chvalaev, B.A. Antokhonov, N.B. Lubsandorzhiev, A. A. Silaev, A. V. Zagorodnikov, S.F. Beregnev, V. V. Prosin, M. I. Panasyuk
Publikováno v:
Nuclear instruments & methods in physics research / A 639, 42 (2011). doi:10.1016/j.nima.2010.09.142
7th International Workshop on Ring Imaging Cherenkov Detectors, RICH2010, Cassis, France, 2010-05-03-2010-05-07
7th International Workshop on Ring Imaging Cherenkov Detectors, RICH2010, Cassis, France, 2010-05-03-2010-05-07
A new 1 km2 EAS Cherenkov detector in the Tunka Valley has been put into full operation in the fall of 2009. In this paper we give a short description of the detector and discuss its physics capabilities.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0ae48290f6a900de0ebd6a07b730127
https://bib-pubdb1.desy.de/record/96011
https://bib-pubdb1.desy.de/record/96011
Autor:
A. V. Zagorodnikov, R. R. Mirgazov, N. M. Budnev, Ch. Spiering, O. Chvalaev, B. K. Lubsandorzhiev, V. V. Prosin, M. I. Panasyuk, Ralf Wischnewski, L. A. Kuzmichev, O. A. Gress, L. V. Pankov, A. V. Skurikhin, A. V. Zablotsky, Yu. A. Semeney, E. E. Korosteleva, V. A. Kozhin, I. V. Yashin, G. Navarra, V. S. Ptuskin, N. N. Kalmykov, B. A. M. Shaibonov
The new EAS Cherenkov array TUNKA-133, with about 1 km**2 sensitive area, is being installed in the Tunka Valley. The investigated energy range is 10**15-10**18 eV. It will consist of 133 optical detectors based on EMI9350 PMTs. Optical detectors are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e4fe0d72d72f20d0ff5a8891179119e
https://bib-pubdb1.desy.de/record/84639
https://bib-pubdb1.desy.de/record/84639
Acceptor states and carrier lifetime in heteroepitaxial HgCdTe-on-Si for mid-infrared photodetectors
Autor:
S. V. Zablotsky, M. V. Yakushev, N. L. Bazhenov, Sergey A. Dvoretsky, D. V. Marin, V. S. Varavin, K. D. Mynbaev
Publikováno v:
Journal of Physics: Conference Series. 643:012004
Temperature dependences of the carrier lifetime and photoluminescence (PL) spectra in Hg1-xCdxTe (0.3 < x < 0.4) epilayers grown on Si substrates (HgCdTe-on-Si) and intended for fabrication of p+-n photodiodes have been studied. It is shown that the
Publikováno v:
Kerntechnik. 60:262-264
Yields in each step of a chemical procedure to isolate strontium from environmental samples for radiometric determination of 90 Sr were determined. The method is based on nitric acid leaching followed by chromatographic extraction of strontium and ra