Zobrazeno 1 - 3
of 3
pro vyhledávání: '"A. V. Veretekha"'
Autor:
S. B. Aleksandrov, M. V. Stepanov, Yu. V. Pogorel’skiĭ, M. Yu. Pogorel’skiĭ, L. É. Velikovskiĭ, I. É. Velikovskiĭ, S. I. Petrov, A. P. Shkurko, M. A. Sokolov, A. É. Byrnaz, D. M. Krasovitskiĭ, M. V. Pavlenko, A. V. Veretekha, A. N. Alekseev, V. P. Chalyĭ, A. G. Tkachenko, I. A. Sokolov
Publikováno v:
Technical Physics Letters. 32:960-963
High-power field-effect transistors (FETs) are among the main applications of heterostructures based on group III metal nitrides, which in most cases implement the classical GaN/AlGaN structure with a single junction. An alternative approach based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8c7ed44bc2407c764780f3166f78d63
https://doi.org/10.1134/s1063785006110162
https://doi.org/10.1134/s1063785006110162
Autor:
A. G. Gladyshev, I. P. Soshnikov, A. V. Veretekha, V. M. Ustinov, G. E. Cirlin, V. G. Dubrovskiĭ
Publikováno v:
Physics of the Solid State. 48:786-791
The possibility is demonstrated of fabricating arrays of cone-shaped GaAs nanowhiskers with a surface number density of up to 109 cm-2, a characteristic height ranging from 300 to 10000 nm, and a transverse size of approximately 200 nm at the base an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04b059bb4fe57ca46271287bcd04ba54
https://doi.org/10.1134/s1063783406040275
https://doi.org/10.1134/s1063783406040275
Autor:
V. T. Barchenko, Vladimir G. Dubrovskii, N. V. Sibirev, A. V. Veretekha, V. M. Ustinov, G. E. Cirlin, I. P. Soshnikov
Publikováno v:
Technical Physics Letters. 32:520-522
The growth of GaAs nanowhisker (NW) arrays on Si(111) substrates by magnetron sputtering is demonstrated. The characteristic NW length is proportional to the effective thickness of a deposited layer and inversely proportional to the transverse whiske
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec0b89892322fa0a6e458be59774e1fc
https://doi.org/10.1134/s1063785006060216
https://doi.org/10.1134/s1063785006060216