Zobrazeno 1 - 10
of 21
pro vyhledávání: '"A. V. Vairagar"'
Publikováno v:
Journal of Electronic Materials. 41:568-572
Electromigration-induced void evolution in various dual-inlaid copper (Cu) interconnect structures was simulated by applying a phenomenological model assisted by Monte Carlo-based simulations, considering the redistribution of heterogeneously nucleat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46618f194872dfe232619f0ebd746144
https://doi.org/10.1007/s11664-011-1855-y
https://doi.org/10.1007/s11664-011-1855-y
Publikováno v:
Microelectronics Reliability. 46:1392-1395
A dual damascene structure with an additional 25 nm Ta diffusion barrier embedded into the upper Cu layer was fabricated to measure the drift velocity of electromigration. The embedded diffusion barrier layer successfully confined void growth into a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb1bfc6291fe3dbab97ab551f5ad05d
https://doi.org/10.1016/j.microrel.2005.11.004
https://doi.org/10.1016/j.microrel.2005.11.004
Autor:
A. V. Vairagar, Ahila Krishnamoorthy, Moritz-Andreas Meyer, Subodh Mhaisalkar, Ehrenfried Zschech
Publikováno v:
Microelectronic Engineering. 82:675-679
Reservoir effect in dual-damascene Cu interconnect structures caused by electromigration was studied by in situ secondary electron microscopy (SEM). Electromigration-induced void nucleation and apparent void movement in opposite direction to electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd3413d72be000493587d6111498ecb2
https://doi.org/10.1016/j.mee.2005.07.076
https://doi.org/10.1016/j.mee.2005.07.076
Autor:
Volker Kahlert, Ahila Krishnamoorthy, Subodh Mhaisalkar, A. V. Vairagar, King-Ning Tu, Moritz Andreas Meyer, Valeriy Sukharev, Hans Jürgen Engelmann, M. Y. Yan, Ehrenfried Zschech
Publikováno v:
Zeitschrift für Metallkunde. 96:966-971
Both in situ microscopy experiments at embedded inlaid copper interconnect structures and numerical simulations based on a physical model provide information about electromigration-induced degradation mechanisms in on-chip interconnects. It is shown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed36e93c6f7fb79530c5a8d2570f29c5
https://doi.org/10.3139/146.101127
https://doi.org/10.3139/146.101127
Autor:
Subodh Mhaisalkar, Ze-Liang Xie, W. Shao, Chih-Hang Tung, Ahila Krishnamoorthy, A. V. Vairagar
Publikováno v:
Surface and Coatings Technology. 198:257-261
Electromigration in dual damascene copper interconnects was investigated using package level electromigration tests and failure analysis techniques. Interface diffusion along Cu/Si3N4 interface was found to be the dominant electromigration path. Effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::892a9ae8e9fbaa53e7e064830a697c62
https://doi.org/10.1016/j.surfcoat.2004.10.090
https://doi.org/10.1016/j.surfcoat.2004.10.090
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 5:198-205
Reliability of interconnect via is increasing an important issue in submicron technology. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b24a4299729f688fa2bbfa32ae528565
https://doi.org/10.1109/tdmr.2005.846830
https://doi.org/10.1109/tdmr.2005.846830
Publikováno v:
Thin Solid Films. :325-329
In sub-micron damascene Cu interconnects, electromigration is mainly due to diffusion at the interfaces of Cu with liner or dielectric cap layer. Many reports have shown Cu/dielectric cap as the dominant diffusion interface. Cu surface treatment afte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dab0a9a8a66ddad66406faf174120e2a
https://doi.org/10.1016/j.tsf.2004.05.082
https://doi.org/10.1016/j.tsf.2004.05.082
Publikováno v:
Microelectronics Reliability. 44:747-754
Experiments were performed to study the effect of line width and length, and the results revealed interesting differences in electromigration behavior of via-fed upper and lower layer dual-damascene test structures. The observed location of electromi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0148599c029b2921c4197e161998a587
https://doi.org/10.1016/j.microrel.2003.12.011
https://doi.org/10.1016/j.microrel.2003.12.011
Autor:
V. Ramgopal Rao, Anand V. Vairagar, B. Schroeder, N. Venkatramani, Alka Kumbhar, Laxmi K. Sahu, Rajiv O. Dusane, Samadhan B. Patil
Publikováno v:
Thin Solid Films. 430:63-66
Highly conducting p- and n-type poly-Si:H films were deposited by hot wire chemical vapor deposition (HWCVD) using SiH4+H2+B2H6 and SiH4+H2+PH3 gas mixtures, respectively. Conductivity of 1.2×102 (Ω cm)−1 for the p-type films and 2.25×102 (Ω cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4994c6d01e8bd1de8f634a6d724c8669
https://doi.org/10.1016/s0040-6090(03)00073-7
https://doi.org/10.1016/s0040-6090(03)00073-7
Autor:
King-Ning Tu, A. V. Vairagar, Moritz Andreas Meyer, Ehrenfried Zschech, Subodh Mhaisalkar, A. M. Gusak, Ahila Krishnamoorthy
Publikováno v:
Applied Physics Letters. 85:2502-2504
In situ electromigration experiments were carried out to study electromigration-induced failure in the upper and lower layers in dual-damascene Cu test structures. The observations revealed electromigration-induced void movement along the Cu/dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d0f210bfccbfae367e451d42c919bfc
https://doi.org/10.1063/1.1795978
https://doi.org/10.1063/1.1795978