Zobrazeno 1 - 10
of 12
pro vyhledávání: '"A. V. Tsikunov"'
Publikováno v:
Semiconductors. 49:1714-1717
The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fb6b46fe2b9474185755a79ab7b2d86
https://doi.org/10.1134/s1063782615130102
https://doi.org/10.1134/s1063782615130102
Autor:
N. P. Shabanova, S. Yu. Gavrilkin, V. A. Kulbachinskii, V. V. Rodin, R. I. Kovalenko, A. V. Tsikunov, I. B. Krynetskii
Publikováno v:
Journal of Experimental and Theoretical Physics. 116:872-875
The temperature dependence of the linear thermal expansion coefficient (TEC) of an InSe single crystal in the (001) plane is measured in the temperature range 7–50 K. A peak in the thermal expansion is detected near T = 10 K, after which the sample
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ffa2070eed9721a984557fbe4d223cf
https://doi.org/10.1134/s1063776113050051
https://doi.org/10.1134/s1063776113050051
Autor:
T. I. Galkina, A. Yu. Klokov, A. I. Sharkov, S. Yu. Kambarov, A. V. Tsikunov, A. F. Plotnikov, D. O. Faminskii, I. M. Krestinich, S. A. Kolosov
Publikováno v:
Journal of Russian Laser Research. 20:202-210
A theoretical model of the temperature distribution of biological tissue under pulsed laser illumination is developed. With the help of the elaborated miniature thermometer based on a shieldless silicon transistor, the spatial-temporal distribution o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221edc7aeadd9ec5edad906e32e0667f
https://doi.org/10.1007/bf02508539
https://doi.org/10.1007/bf02508539
Autor:
M. L. Chukharkin, A. V. Varlashkin, A. V. Tsikunov, N. P. Shabanova, S.I. Krasnosvobodtsev, O.V. Snigirev
Publikováno v:
Technical Physics. 52:660-662
A method is presented for the deposition of smooth epitaxial high-T c superconducting films using a pulsed infrared YAG: Nd3+ laser and velocity filtration. This method is based on the removal of drops and solid particles from the flow of deposited s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::636660c228a1be8dead233eac8ac99dc
https://doi.org/10.1134/s1063784207050192
https://doi.org/10.1134/s1063784207050192
Autor:
E. E. Onishchenko, V. V. Zaitsev, A. V. Kvit, M. V. Yakimov, A. V. Klokov, A. V. Perestoronin, A. V. Tsikunov, Yu. V. Klevkov, S. A. Medvedev, V. S. Bagaev
Publikováno v:
Physics of the Solid State. 40:924-929
The variation of the deep-level spectrum of stoichiometric ZnTe in the various stages of its purification and annealing in saturated Zn vapor has been studied by low-temperature photoluminescence and IR Fourier spectroscopy. The relation between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c329d8c5e90be4a75a4878b4d6c49020
https://doi.org/10.1134/1.1130449
https://doi.org/10.1134/1.1130449
Publikováno v:
Nuclear Engineering and Design. 173:143-150
The results of computational and design studies of a 1200 MW, lead-cooled pool-type fast reactor with UPu nitride fuel based on the same principles as the previously considered BREST-300 design (Adamov, E.O., Orlov, V.V., Filin et al. Proc. Int. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aaff14bda28b2435065c05268878524
https://doi.org/10.1016/s0029-5493(97)00098-8
https://doi.org/10.1016/s0029-5493(97)00098-8
Publikováno v:
Defect and Diffusion Forum. :543-550
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72acb276a72360d169a615f3ab68c696
https://doi.org/10.4028/www.scientific.net/ddf.103-105.543
https://doi.org/10.4028/www.scientific.net/ddf.103-105.543
Publikováno v:
Atomic Energy; Jul2007, Vol. 103 Issue 1, p501-508, 8p
Publikováno v:
Physica Status Solidi (a). 82:467-473
The formation and annealing processes of radiation defects in bulk crystals and thin (≈ 1.2 μm) epitaxial layers of Si are studied. Czochralski grown (pulled) and vacuum float-zone n-type Si crystals with ϱ = 1 to 2 Ωcm as well as n-type Si epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fea51fa1c49f65642c1e36e1669ca46
https://doi.org/10.1002/pssa.2210820216
https://doi.org/10.1002/pssa.2210820216
Publikováno v:
Radiation Effects. 103:187-195
The peculiarities of the radiation defects accumulation processes during irradiation by60Co γ-quanta and rearrangement of these defects at further isochronal annealing are studied for n-type silicon epitaxial layers of 1.2 and 5 μm thickness and ρ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd23fbbb41d8bc017070b6ba32806090
https://doi.org/10.1080/00337578708221251
https://doi.org/10.1080/00337578708221251