Zobrazeno 1 - 3
of 3
pro vyhledávání: '"A. V. Thean"'
Publikováno v:
Physical Models for Quantum Dots ISBN: 9781003148494
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27f91ea1d29d6582811e3e24c4ed0a24
https://doi.org/10.1201/9781003148494-55
https://doi.org/10.1201/9781003148494-55
Publikováno v:
Physical Models for Quantum Dots ISBN: 9781003148494
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c0f1f5df5bad003f68c89c6782dd070
https://doi.org/10.1201/9781003148494-56
https://doi.org/10.1201/9781003148494-56
Autor:
H. C. Lin, Lieve Teugels, X. Zhou, Y-V. Thean, Farid Sebaai, Jan Willem Maes, Qi Xie, A. Sibaja Hernandez, Clement Merckling, Jacopo Franco, Sonja Sioncke, E. Chiu, Michael Eugene Givens, A. Opdebeeck, Niamh Waldron, D. H. van Dorp, Nadine Collaert, A. Vais, Kathy Barla, K. De Meyer, Guillaume Boccardi, Fu Tang, Laura Nyns, Xiaoqiang Jiang
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We report record results for III-V gate-all-around devices fabricated on 300mm Si wafers. A gm of 2200 μS/μm with an SSsat of 110 mV/dec is achieved for an Lg=50nm device using a newly developed gate stack interlayer material deposited by ALD. In a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9382827a982b36470d8d5dcb0ff86fbf
https://doi.org/10.1109/iedm.2015.7409805
https://doi.org/10.1109/iedm.2015.7409805
