Zobrazeno 1 - 10
of 66
pro vyhledávání: '"A. V. Stronski"'
Autor:
Liubov O. Revutska, Oleg I. Shylenko, Alexander V. Stronski, Vladimir Komanicky, Vitaliy S. Bilanych
Publikováno v:
KPI Science News, Iss 1 (2020)
Проблематика. Халькогенідні стекла формують унікальний клас матеріалів та є привабливими з точки зору їх різноманітних застосувань, що
Externí odkaz:
https://doaj.org/article/308b5ab4b1dd4fe2b5d3b4171664d7b1
Autor:
M.V. Popovych, V.P. Sergienko, K.V. Shportko, T.S. Kavetskyy, Optics, H Budapest, Pob , Hungary, L.O. Revutska, I. Kaban, P. Jóvári, Alexander V. Stronski
Publikováno v:
Semiconductor physics, quantum electronics & optoelectronics 24(3), 312-318 (2021). doi:10.15407/spqeo24.03.312
Semiconductor physics, quantum electronics & optoelectronics 24(3), 312 - 318 (2021). doi:10.15407/spqeo24.03.312
The parameters of the boson peak (BP) and the first sharp diffraction peak (FSDP) in (As$_2$S$_3$)$_x$(GeS$_2$)$_{1���x}$ gla
The parameters of the boson peak (BP) and the first sharp diffraction peak (FSDP) in (As$_2$S$_3$)$_x$(GeS$_2$)$_{1���x}$ gla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0a63147376d4ca9831c7147e5716a47
https://doi.org/10.15407/spqeo24.03.312
https://doi.org/10.15407/spqeo24.03.312
Publikováno v:
Фізика і хімія твердого тіла, Vol 22, Iss 2, Pp 301-306 (2021)
In order to solve the problem of the ohmic contact between the crystal surface and the metal electrode in the manufacturing process of the X/γ-ray detector, this paper uses a laser to probe the doping process of In/CdTe crystals in different media.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d297963178f222fd313cf19da530e13
https://doi.org/10.15330/pcss.22.2.301-306
https://doi.org/10.15330/pcss.22.2.301-306
Autor:
Tomas Wagner, Pál Jóvári, Alexander V. Stronski, Ivan Kaban, L. Xi, I. Lishchynskyy, Thomas Gemming, O. Shuleshova
Publikováno v:
Materials Today: Proceedings. 35:530-533
Microstructure of (GeS3)100-xAgx (x = 0, 5, 10, 15, 20, 25) and (GeS2)100-xAgx (x = 0, 5, 10, 15, 20) has been studied by scanning electron microscopy. It is found that the glasses of both systems are phase separated: (GeS3)100-xAgx for 5 ≤ x ≤ 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2859f8f84a0b4a6b91618e3017e55cd8
https://doi.org/10.1016/j.matpr.2019.10.015
https://doi.org/10.1016/j.matpr.2019.10.015
Publikováno v:
Фізика і хімія твердого тіла, Vol 21, Iss 3, Pp 440-444 (2020)
The electro-reflectance spectra, including their polarization dependencies were analyzed for n-Si(110) in the energy range of 2.9-3.8 eV. Based on the optical anisotropy of electro-optical effect, two contributions originated from a surface, (isotrop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c18da1924cb9e162e3750dd38deb4a2e
https://journals.pnu.edu.ua/index.php/pcss/article/view/4122
https://journals.pnu.edu.ua/index.php/pcss/article/view/4122
Autor:
Oleg Shylenko, Vladimir Komanicky, Alexander V. Stronski, Liubov O. Revutska, Vitaliy S. Bilanych
Publikováno v:
KPI Science News, Vol 0, Iss 1, Pp 48-53 (2020)
Проблематика. Халькогенідні стекла формують унікальний клас матеріалів та є привабливими з точки зору їх різноманітних застосувань, що
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0631c5a75bc9a886687299e59459874
https://doi.org/10.20535/kpi-sn.2020.1.197958
https://doi.org/10.20535/kpi-sn.2020.1.197958
Publikováno v:
Фізика і хімія твердого тіла, Vol 21, Iss 1, Pp 146-150 (2020)
The effect of electron beam irradiation on the amorphous chalcogenide film As38S36Se26 was studied. The formation of cones with a Gaussian profile on the surfaces of the films was found after local electron irradiation. Exposition dependent evolution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6e85ec9d991c36d5692ec2599366f13
https://journals.pnu.edu.ua/index.php/pcss/article/view/2968
https://journals.pnu.edu.ua/index.php/pcss/article/view/2968
Autor:
P. Petkov, Taras Kavetskyy, Tamara Petkova, V. F. Valeev, V. I. Nuzhdin, Alexander V. Stronski, A. M. Rogov, Andrey L. Stepanov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 462:187-190
An approach for creating of a diffraction chalcogenide semiconductor glass grating on the surface of (GeSe5)80B20 layer by low-energy high-dose mask ion implantation is presented. During Ag+-ion implantation, Ag nanoparticles were synthesized in unpr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16298367936c1ac24f676ca464fa6067
https://doi.org/10.1016/j.nimb.2019.09.027
https://doi.org/10.1016/j.nimb.2019.09.027
Autor:
A. Meshalkin, K. Shportko, A. Prisacar, G. Triduh, O. Paiuk, O. Gudymenko, A. Gubanova, A. Korchovyi, E. Achimova, L. Revutska, Alexander V. Stronski
Publikováno v:
Optical Materials. 94:393-397
In this paper we focus on structural properties of As2S3–Ag glasses in phase separation region (Ag content: 0, 5, 7 at. %) using XRD technique and Raman spectroscopy and report on some application of studied glasses. X-ray diffraction experiments c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70f81828c40c0a2e92a9ed9bda8218e5
https://doi.org/10.1016/j.optmat.2019.06.016
https://doi.org/10.1016/j.optmat.2019.06.016
Autor:
K. Shportko, Alexander V. Stronski, L. Revutska, M. Popovych, Ivan Kaban, Pál Jóvári, Taras Kavetskyy
Publikováno v:
Journal of Non-Crystalline Solids. 572:121075
Structural order in the chalcogenide glasses of (As2S3)x(GeS2)1−x (x = 0.0, 0.1, 0.2, 0.4, 0.6, 0.8, 1.0) system is examined in terms of the parameters of local atomic structure as a function of composition x, obtained using high-resolution Raman s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c24553bded3500ab0f634746eb274449
https://doi.org/10.1016/j.jnoncrysol.2021.121075
https://doi.org/10.1016/j.jnoncrysol.2021.121075