Zobrazeno 1 - 10
of 68
pro vyhledávání: '"A. V. Spesivtsev"'
Autor:
D. R. Islamov, T. V. Perevalov, A. A. Gismatulin, I. A. Azarov, E. V. Spesivtsev, V. A. Gritsenko
Publikováno v:
Journal of Experimental and Theoretical Physics. 136:345-352
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f10f01b7df6e82291a8a86a79e50560
https://doi.org/10.1134/s1063776123030135
https://doi.org/10.1134/s1063776123030135
Autor:
M. V. Kruchinina, Ya. I. Prudnikova, S. A. Kurilovich, A. A. Gromov, V. N. Kruchinin, V. V. Atuchin, O. V. Naumova, E. V. Spesivtsev, V. A. Volodin, S. E. Peltek, G. V. Shuvalov, V. M. Generalov
Publikováno v:
Сибирский онкологический журнал, Vol 16, Iss 4, Pp 32-41 (2017)
Differences in the rate constants of specific interactions between serum tumor M2-pyruvate kinase (Tumor M2-PK) and highly specific monoclonal antibodies deposited on the surface of biochips were found in colorectal cancer patients using surface plas
Externí odkaz:
https://doaj.org/article/8bd755f18fc4497c8605a0135f340e4a
Publikováno v:
Semiconductors. 56:223-229
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90a0be6b6319362458f692c6b480b052
https://doi.org/10.1134/s1063782622020166
https://doi.org/10.1134/s1063782622020166
Publikováno v:
Cyber-Physical Systems and Control II ISBN: 9783031208744
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa1d45bf2b46c5dbdc11a8146d80a26f
https://doi.org/10.1007/978-3-031-20875-1_46
https://doi.org/10.1007/978-3-031-20875-1_46
Autor:
V. V. Mikhailov, A. V. Spesivtsev, V. A. Sobolevsky, N. K. Kartashev, I. A. Lavrinenko, O. V. Lavrinenko, V. A. Spesivtsev
Publikováno v:
Izvestiya, Atmospheric and Oceanic Physics. 57:1198-1210
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96bc15fcd0bbacd2a2c888b16dc3118b
https://doi.org/10.1134/s0001433821090553
https://doi.org/10.1134/s0001433821090553
Autor:
R. M. Kh. Iskhakzai, E. V. Spesivtsev, V. Sh. Aliev, Timofey V. Perevalov, Vladimir N. Kruchinin, Vladimir A. Gritsenko, V. A. Pustovarov
Publikováno v:
Optics and Spectroscopy. 128:1577-1582
The optical properties and composition of thermal silicon oxide thin films processed in a hydrogen electron cyclotron resonance plasma have been studied by ellipsometry, quantum-chemical modeling, and photoluminescence spectroscopy. It has been found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44171ae06623d001c273bb3da6c1734a
https://doi.org/10.1134/s0030400x20100173
https://doi.org/10.1134/s0030400x20100173
Publikováno v:
Interexpo GEO-Siberia. 8:134-138
The experimental determination of the reflection coefficients in the visible region of the spectrum of chromium oxide films unexposed and exposed to laser radiation was performed. The reflection coefficients were measured using a Linza - 150 spectrop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c077eff58fcb032c3c4940fe07bb541f
https://doi.org/10.33764/2618-981x-2020-8-1-134-138
https://doi.org/10.33764/2618-981x-2020-8-1-134-138
Publikováno v:
Artificial Intelligence Trends in Systems ISBN: 9783031090752
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77aa77afb0662c71ec4dcc4b6f88d15c
https://doi.org/10.1007/978-3-031-09076-9_53
https://doi.org/10.1007/978-3-031-09076-9_53
Autor:
Vladimir N. Kruchinin, S. V. Rykhlitskii, S. V. Shekhovtsov, S. E. Pel’tek, Ya. I. Prudnikova, E. V. Spesivtsev, M. V. Kruchinina, Vladimir A. Volodin
Publikováno v:
Optics and Spectroscopy. 127:170-176
Diagnostic pilot monitoring of the groups of healthy patients and patients with colorectal cancer (CRC) at different stages of the disease was carried out using Raman spectroscopy (RS) and measuring the state of polarized light near the conditions of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b05888a4eaa6ad5a83943c5493004380
https://doi.org/10.1134/s0030400x19070142
https://doi.org/10.1134/s0030400x19070142
Publikováno v:
Semiconductors. 53:241-245
The anodic oxidation rate of silicon-on-insulator films fabricated by hydrogen transfer is studied as a function of the temperature of subsequent annealing. It is established that the oxidation rate of transferred silicon-on-insulator films is five t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47f5f5e130dfbe7e8095b94bb2de9c0d
https://doi.org/10.1134/s1063782619020246
https://doi.org/10.1134/s1063782619020246